Browse > Article
http://dx.doi.org/10.7471/ikeee.2017.21.1.73

4H-SiC Trench-type Accumulation Super Barrier Rectifier(TASBR) for Low Forward Voltage drop  

Bae, Dong-woo (Dept. of Electronic Engineering, Sogang University)
kim, Kwang-soo (Dept. of Electronic Engineering, Sogang University)
Publication Information
Journal of IKEEE / v.21, no.1, 2017 , pp. 73-76 More about this Journal
Abstract
SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.
Keywords
4H-SiC; Super Barrier Rectifier(SBR); forward voltage drop; breakdown voltage; channel implant;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 G. H. Song and K. K. Kim, "SiC/SiO2 Interface Characteristics in N-based 4H-SiC MOS Capacitor Fabricated with PECVD and NO Annealing Processes," j.inst.Korean.electr.electron.eng, vol. 18, no.4, pp. 447-455, Dec. 2014. DOI:10.7471/ikeee.2014.18.4.447   DOI
2 B. J. Baliga, "Fundamentals of Power Semiconductor Devices," NY, USA: Springer , 2010, pp. 91-166.
3 Chin-Fang Huang, Hua-Chih Hsu, Kuan-Wei Chu, Li-Heng Lee, Ming-Jinn Tsai, Kung-Yen and Feng Zhao "Counter-Doped JTE, an Edge Termination for HV SiC Devices With Increased Tolerance to the Surface Charge" IEEE Electron Device Lett., vol. 62, no. 2, pp. 354-358, Feb. 2015. DOI: 10.1109/TED.2014.2361535   DOI
4 B. S. Kim and K. K. Kim, "A 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier using the trapezoid mesa and the upper half of sidewall," j.inst.Korean.electr.electron.eng, vol. 17, no.4, pp. 428-433, Dec. 2013. DOI : 10.7471/ikeee.2013.17.4.428   DOI
5 V. Rodov, A. L. Ankoudinov, Taufic, "Super Barrier Rectifier - A New Generation of Power Diode," Applied Power Electronics Conference, APEC 2007 - Twenty Second Annual IEEE, vol., no., pp.1053-1056, Feb. 25 2007 March 1 2007.DOI: 10.1109/TIA.2007.912752