Study on the SCR-based ESD Protection Circuit Using the Segmentation Layout Technique with High Holding Voltage |
Park, Jun-Geol
(Dept. of Electronics Engineering, DanKook Unversity)
Do, Kyoung-Il (Dept. of Electronics Engineering, DanKook Unversity) Chae, Hee-Guk (Dept. of Electronics Engineering, DanKook Unversity) Seo, Jeong-Yun (Dept. of Electronics Engineering, DanKook Unversity) Koo, Yong-Seo (Dept. of Electronics Engineering, DanKook Unversity) |
1 | A. Wang, On-Chip ESD Protection for Integrated Circuits (2nd ed.), Springer, 2002. DOI : 10.1007/b117005 DOI |
2 | C. Russ, K. Bock, M. Rasras, I. Wolf, G. Groeseneken, and H. Maes, "Non-uniform triggering of gg-nMOSt investigated by combined emission microcopy and transmission line pulsing," Proceedings of Electrical Overstress / Electrostatic Discharge Symposium (EOS/ESD1998), pp. 177-186, 1998. DOI : 10.1109/EOSESD.1998.737037 DOI |
3 | J. Lee "Analysis of SCR, MVSCR, LVTSCR with I-V Characteristic and Turn-On-Time," j.inst.Korean.electr.electron.eng, vol. 20, no. 3, pp. 295-398, 2016. DOI : 10.7471/ikeee.2016.20.3.295 DOI |
4 | O. Quittard, Z. Mrcarica, F. Blanc, G. Notermans, T. Smedes, and H. Zwol, "ESD protection for high-voltage CMOS technologies," Proceedings of Electrical Overstress / Electrostatic Discharge Symposium (EOS/ESD 2006), pp. 77-86, 2006. DOI : 10.1109/EOSESD.2006.5256797 |
5 | Z. Liu, J. Liou, and J. Vinson, "Novel silicon controller rectifier (SCR) layout topology for high-voltage electrostatic discharge (ESD) applications," IEEE Electron Device Letter , vol. 29. no. 7, pp. 753-755, 2008. DOI : 10.1109/LED.2008.923711 DOI |
6 | Z. Liu, J. He, J. Liou, J. Liu, M. Miao, and S. Dong, "Segmented SCR for High Voltage ESD Protection," Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT2012), pp. 1-4 2012. DOI : 10.1109/ICSICT.2012.6467917 DOI |
7 | J. Barth, K. Verhaege, and L. Henry, "TLP Calibration, Correlation, Standards, and New Techniques," Proceedings of Electrical Overstress / Electrostatic Discharge Symposium (EOS/ESD2000), pp. 85-96, 2000. DOI : 10.1109/EOSESD.2000.890031 DOI |