1 |
B. J. Baliga, "Advanced Power MOSFET Concepts," New York Springer-Science, pp. 265-354, 373, 2010.
|
2 |
Y. H. Lho et. al., "Design of 100-V non-uniform 100-V super-junction trench power MOSFET with low on-resistance," IEICE Electronics Express, Vol. 9, No. 13, pp. 1109-1114, July. 2012.
DOI
|
3 |
David L. Blackburn, "Temperature Measurements of Semiconductor Devices," 20th IEEE SEMI-THERM Symposium, pp. 70-79, 2004.
|
4 |
S. M. Sze, "Physics of Semiconductor Devices," Third Edition, Wiley Interscience, pp. 95, 2007.
|
5 |
Helmut KOck et. al., "Design of a test chip with small embedded temperature sensor structures realized in a common-drain power trench technology," IEEE Conference on Microelectronic Test Structure, Amsterdam, The Netherlands, April 4-7, 2011.
|
6 |
SILVACO TCAD Manual, Atlas, 2011.
|
7 |
Emmanual Marcault et al., "Distributed Electro-thermal Modeling Methodology for MOS Gated Power Devices Simulations," Exploring Processor Parallelism Estimation Methods and Optimization Strategies, pp. 148-152, 2013.
|
8 |
H. Dia, "A temperature dependent power MOSFET model for switching application," Thermal Investigation of ICs and Systems, Therminic 2009. 15thInternational Workshopon, vol., no. pp. 87-90, 7-9, Oct. 2009.
|
9 |
Kosel V, et. al., "A Non-linear thermal modeling of DMOS transistor and validation using electrical measurements and FEM simulations. Micro electro J ., pp. 889-896, 2010.
|
10 |
LTspice IV, 2014 Linear Technology Corporation
|
11 |
ANSYS Fluent User's Guide Release 14.0 Nov. 2011.
|