1 |
Y.-L. Wang, C. Liu, M. -S. Feng, Jowei Dun and K. -S. Chou, "Effects of underlying films o nt the chemical-mechanical polishing for shllow trench isolation technology,"Thin Solid Films, 308-309, pp.534-549, 1997
|
2 |
Sang-Ick Lee, Jinho Hwang, Hyoungjae Kim and Haedo JeongYao Wang, "Investigation of polishing characteristics of shllow trench isolation chemical mechanical planarization with different types of slurries," Microelectronic Engineering, Vol.84, pp.626-630, 2007
DOI
|
3 |
Yair Ein-Eli and David Starosvetsky, "Review on copper chemical-mechanical polishing(CMP) and post-CMP cleaning in ultra large system integrated(ULSI)-An electrochemical perspective," Electrochimica Acta, Vol.52, pp.1825-1838, 2007
DOI
ScienceOn
|
4 |
Xuejue Huang, Whn-Chin Lee, Charles Kuo, Digh Hisamoto, Leland Chang, Jakub Kedzierski, Erik Anderson, Hideki Takeuchi, Yang=Kyu Choi, Kazuya Asano, Vivek Subramanian Tsu-Jae King, Jeffrey Bokor and Chenming Hu, "Sub-50 nm P-channel FinFET," IEEE Transactions on Electron Devices, Vol.48(5), pp.880-886, 2001
DOI
|
5 |
Yang-Jyu Choi, Tsu-Jae King and Chenming Hu, "Spacer FinFET: nanoscale double-gate CMOS technology for the terabit era," Solid State Electronics, Vol.46, pp.1595-1601, 2002
DOI
|
6 |
Kyoung-Rok Han, byung-Gil Choi and Jong-Ho Lee, "Design Consideration of Body-Tied FinFETS( ) Implemented on Bulk Si wafers," Journal of Semiconductor Technology and Science, Vol.4(1), pp.12-17, 2004
|