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http://dx.doi.org/10.7471/ikeee.2014.18.4.532

Thermal Characteristics according to Trench Etch angle of Super Junction MOSFET  

Kang, Ey Goo (Dept. of Photovoltaic Engineering, Far East University)
Publication Information
Journal of IKEEE / v.18, no.4, 2014 , pp. 532-535 More about this Journal
Abstract
This paper analyzed thermal characteristics of super junction MOSFET using process and design parameters. Trench process is very important to super junction MOSFET process. We analyzed the difference of temperature, thermal resistance, total power consumption according to trench etch angle. As a result we obtained minimum value of temperature difference and thermal resistance at $89.3^{\circ}$ of trench etch angle. The electrical characteristics distribution of super junction MOSFET is not showed tendency according to trench etch angle. We need iterative experiments and simulation for optimal value of electrical characteristics. The super junction power MOSFET that has superior thermal characteristics will use automobile and industry.
Keywords
Super Juction; Power MOSFET; Thermal Resistance; Trench Etch; P-pillar; P-base concentration;
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