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http://dx.doi.org/10.7471/ikeee.2014.18.4.447

SiC/SiO2 Interface Characteristics in N-based 4H-SiC MOS Capacitor Fabricated with PECVD and NO Annealing Processes  

Song, Gwan-Hoon (Dept. of Electronics Engineering, Sogang University)
Kim, Kwang-Soo (Dept. of Electronics Engineering, Sogang University)
Publication Information
Journal of IKEEE / v.18, no.4, 2014 , pp. 447-455 More about this Journal
Abstract
In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.
Keywords
4H-SiC; MOSCAP; Interface trap density; PECVD; N-passivation;
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Times Cited By KSCI : 1  (Citation Analysis)
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