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http://dx.doi.org/10.7471/ikeee.2014.18.1.025

The SCR-based ESD Protection Circuit with High Latch-up Immunity for Power Clamp  

Choi, Yong-Nam (Dept. of Electronics and Electrical Engineering, Dankook University)
Han, Jung-Woo (Dept. of Electronics and Electrical Engineering, Dankook University)
Nam, Jong-Ho (Dept. of Electronics and Electrical Engineering, Dankook University)
Kwak, Jae-Chang (Dept. of Computer Science, Seokyeong University)
Koo, Yong-Seo (Dept. of Electronics and Electrical Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.18, no.1, 2014 , pp. 25-30 More about this Journal
Abstract
In this paper, SCR(Silicon Controlled Rectifier)-based ESD(Electrostatic Discharge) protection circuit for power clamp is proposed. In order to improve latch-up immunity caused by low holding voltage of the conventional SCR, it is modified by inserting n+ floating region and n-well, and extending p+ cathode region in the p-well. The resulting ESD capability of our proposed ESD protection circuit reveals a high latch-up immunity due to the high holding voltage. It is verified that electrical characteristics of proposed ESD protection circuit by Synopsys TCAD simulation tool. According to the simulation results, the holding voltage is increased from 4.61 V to 8.75 V while trigger voltage is increased form 27.3 V to 32.71 V, respectively. Compared with the conventional SCR, the proposed ESD protection circuit has the high holding voltage with the same triggering voltage characteristic.
Keywords
ESD; Power Clamp; SCR; Holding voltage; Trigger voltage;
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