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http://dx.doi.org/10.7471/ikeee.2014.18.1.119

CMOS ROIC for MEMS Acceleration Sensor  

Yoon, Eun-Jung (Dept. of Electronics Engineering, Incheon National University)
Park, Jong-Tae (Dept. of Electronics Engineering, Incheon National University)
Yu, Chong-Gun (Dept. of Electronics Engineering, Incheon National University)
Publication Information
Journal of IKEEE / v.18, no.1, 2014 , pp. 119-127 More about this Journal
Abstract
This paper presents a CMOS readout circuit for MEMS(Micro Electro Mechanical System) acceleration sensors. It consists of a MEMS accelerometer, a capacitance to voltage converter(CVC) and a second-order switched-capacitor ${\Sigma}{\Delta}$ modulator. Correlated-double-sampling(CDS) and chopper-stabilization(CHS) techniques are used in the CVC and ${\Sigma}{\Delta}$ modulator to reduce the low-frequency noise and DC offset. The sensitivity of the designed CVC is 150mV/g and its non-linearity is 0.15%. The duty cycle of the designed ${\Sigma}{\Delta}$ modulator output increases about 10% when the input voltage amplitude increases by 100mV, and the modulator's non-linearity is 0.45%. The total sensitivity is 150mV/g and the power consumption is 5.6mW. The proposed circuit is designed in a 0.35um CMOS process with a supply voltage of 3.3V and a operating frequency of 2MHz. The size of the designed chip including PADs is $0.96mm{\times}0.85mm$.
Keywords
Accelerometer; Capacitance to Voltage Converter; Sigma-delta Modulator; MEMS; CMOS;
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