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http://dx.doi.org/10.7471/ikeee.2013.17.4.531

Deformation of the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor characteristics by UV irradiation  

Lim, Jin Hong (Dept. of Semiconductor Science and Technology /SPRC, Chonbuk National University)
Kim, Jeong Jin (Dept. of Semiconductor Science and Technology /SPRC, Chonbuk National University)
Yang, Jeon Wook (Dept. of Semiconductor Science and Technology /SPRC, Chonbuk National University)
Publication Information
Journal of IKEEE / v.17, no.4, 2013 , pp. 531-536 More about this Journal
Abstract
The impact of UV irradiation process on the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor was investigated. Due to the high intensity UV irradiation before the gate dielectric deposition, the conductivity of AlGaN/GaN structure and the drain saturation current of the transistor increased by about 10 %. However, the pinch off characteristics of transistor was severely deformed by the process. By comparing the electrical characteristics of the transistors, it was proposed that the high intensity UV irradiation formed a sub-channel under the two dimensional electron gas of AlGaN/GaN structure even without additional impurity injection.
Keywords
AlGaN/GaN; MOSHFET; UV; 2-DEG; Deformation;
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