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http://dx.doi.org/10.7471/ikeee.2013.17.3.378

The Design of SCR-based Whole-Chip ESD Protection with Dual-Direction and High Holding Voltage  

Song, Bo-Bae (Dept. of Electronics and Electrical Engineering, Dankook University)
Han, Jung-Woo (Dept. of Electronics and Electrical Engineering, Dankook University)
Nam, Jong-Ho (Dept. of Electronics and Electrical Engineering, Dankook University)
Choi, Yong-Nam (Dept. of Electronics and Electrical Engineering, Dankook University)
Koo, Yong-Seo (Dept. of Electronics and Electrical Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.17, no.3, 2013 , pp. 378-384 More about this Journal
Abstract
We have investigated the electrical characteristics of SCR(Silicon Controlled Rectifier)-based ESD power clamp circuit with high holding voltage and dual-directional ESD protection cells for a whole-chip ESD protection. The measurement results indicate that the dimension of n/p-well and p-drift has a great effect on holding voltage (2V-5V). Also A dual-directional ESD protection circuit is designed for I/O ESD protection application. The trigger voltage and the holding voltage are measured to 5V and 3V respectively. In comparison with typical ESD protection schemes for whole-chip ESD protection, this ESD protection device can provide an effective protection for ICs against ESD pulses in the two opposite directions, so this design scheme for whole-chip ESD protection can be discharged in ESD-stress mode (PD, ND, PS, NS) as well as VDD-VSS mode. Finally, a whole-chip ESD protection can be applied to 2.5~3.3V VDD applications. The robustness of the novel ESD protection cells are measured to HBM 8kV and MM 400V.
Keywords
ESD; SCR; ggNMOS; Trigger voltage; Holding voltage;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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