[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.7471/ikeee.2013.17.3.365

A Study on Electrical Characteristics and Optimization of Trench Power MOSFET for Industrial Motor Drive

Kang, Ey Goo (Dept. of Photovoltaic Engineering, Far East University)

Publication Information

Journal of IKEEE / v.17, no.3, 2013 , pp. 365-370 More about this Journal

Abstract

Power MOSFET is developed in power savings, high efficiency, small size, high reliability, fast switching, and low noise. Power MOSFET can be used in high-speed switching transistors devices. Recently attention given to the motor and the application of various technologies. Power MOSFET is a voltage-driven approach switching device and designed to handle on large power, power supplies, converters, motor controllers. In this paper, the 400 V Planar type, and the trench type for realization of low on-resistance are designed. Trench Gate Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.

Keywords

Power MOSFET; Planar process; Trench process; Breakdown voltage; On resistance; P-base dose;

Citations & Related Records

Reference

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