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http://dx.doi.org/10.7471/ikeee.2011.15.2.164

Analysis of The Dual-Emitter LIGBT with Low Forward Voltage Loss and High Lacth-up Characteristics  

Jung, Jin-Woo (School of Electrical and Electronics Engineering, Dankook University)
Lee, Byung-Seok (School of Electrical and Electronics Engineering, Dankook University)
Park, San-Cho (Daou Xilicon)
Koo, Yong-Seo (School of Electrical and Electronics Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.15, no.2, 2011 , pp. 164-170 More about this Journal
Abstract
In this paper, we present a novel Lateral Insulated-Gate Bipolar Transistor(LIGBT) structure. The proposed structure has extra emitter between emitter and collector of the conventional structure. The added emitter can significantly improve latch-up current densities, forward voltage drop (Vce,sat) and turn-off characteristics. From the simulation results, the proposed LIGBT has the lower forward voltage drop(1.05V), the higher latch-up current densities($2.5{\times}10^3\;A/{\mu}m^2$), and the shorter turn-off time(7.4us) than those of the conventional LIGBT.
Keywords
Power Device; LIGBT; Dual-emitter; Latch-up;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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