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Study on Modeling of ZnO Power FET  

Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
Chung, Hun-Suk (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of IKEEE / v.14, no.4, 2010 , pp. 277-282 More about this Journal
Abstract
In this paper, we proposed ZnO trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, ZnO and SiC power devices is next generation power semiconductor devices. We carried out modeling of ZnO SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.
Keywords
Static Induction Transistor; ZnO; Epi layer; High Voltage; Power Devices;
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  • Reference
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