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Improved Electrical Characteristics of HgSe Nanoparticle-based Thin Film Transistors by Thermal Annealing  

Yun, Jung-Gwon (Dept. of Electrical Engineering, Korea University)
Cho, Kyoung-Ah (Dept. of Electrical Engineering, Korea University)
Kim, Sang-Sig (Dept. of Electrical Engineering, Korea University)
Publication Information
Journal of IKEEE / v.14, no.3, 2010 , pp. 219-223 More about this Journal
Abstract
In this study, we fabricated the HgSe nanoparticle-based thin film transistors (TFTs) of back gate structure with PVA gate dielectric. The fabricated TFTs show the improved electrical characteristics in the mobility of $16\;cm^2$/Vs and the on/off ratio of $10^4$ after annealing process at $100^{\circ}C$ for 5 min. AFM images demonstrate that the decrease in surface roughness according to annealing process leads to the improvement of electrical characteristics. The change in drain current caused from the conditions of flexible substrate is investigated under 0.6% strain.
Keywords
nanoparticle; thin film transistor; HgSe;
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