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Analysis of the electrical characteristics of the novel TIGBT with additional pMOS  

Lee, Hyun-Duck (Department of Electronics Engineering, Seokyeoung University)
Won, Jong-Il (Department of Electronics Engineering, Seokyeoung University)
Yang, Yil-Suk (Electronics and Telecommunications Research Institute)
Koo, Yong-Seo (Electronics and Electrical Engineering, Dankook University)
Publication Information
Journal of IKEEE / v.14, no.1, 2010 , pp. 55-64 More about this Journal
Abstract
In this paper, we proposed the novel TIGBT with an additional p-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed TIGBT are caused by an enhanced electron current injection efficiency which is caused by additional p-type MOS structure. In the simulation result, the proposed TIGBT has the lower on state voltage of 1.67V and the shorter turn-off time of 3.1us than those of the conventional TIGBT(2.25V, 3.4us).
Keywords
TIGBT; Trench Gate; Turn-off; Power Device; Power Electronics;
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Times Cited By KSCI : 1  (Citation Analysis)
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