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http://dx.doi.org/10.5012/bkcs.2006.27.2.219

Thermal Decomposition of Tetrakis(ethylmethylamido) Titanium for Chemical Vapor Deposition of Titanium Nitride  

Kim, Seong-Jae (Faculty of Applied Chemical Engineering and Research Institute for Catalysis, Chonnam National University)
Kim, Bo-Hye (Department of Korean Medicinal Supply, Dongshin University)
Woo, Hee-Gweon (Department of Chemistry and Nanotechnology Research Center, Chonnam National University)
Kim, Su-Kyung (Faculty of Applied Chemical Engineering and Research Institute for Catalysis, Chonnam National University)
Kim, Do-Heyoung (Faculty of Applied Chemical Engineering and Research Institute for Catalysis, Chonnam National University)
Publication Information
Bulletin of the Korean Chemical Society / v.27, no.2, 2006 , pp. 219-223 More about this Journal
Abstract
The thermal decomposition of tetrakis(ethylmethylamido) titanium (TEMAT) has been investigated in Ar and $H_2$ gas atmospheres at gas temperatures of 100-400 ${^{\circ}C}$ by using Fourier Transform infrared spectroscopy (FTIR) as a fundamental study for the chemical vapor deposition (CVD) of titanium nitride (TiN) thin film. The activation energy for the decomposition of TEMAT was estimated to be 10.92 kcal/mol and the reaction order was determined to be the first order. The decomposition behavior of TEMAT was affected by ambient gases. TEMAT was decomposed into the intermediate forms of imine (C=N) compounds in Ar and $H_2$ atmosphere, but additional nitrile (RC$\equiv$N) compound was observed only in $H_2$ atmosphere. The decomposition rate of TEMAT under $H_2$ atmosphere was slower than that in Ar atmosphere, which resulted in the extension of the regime of the surface reaction control in the CVD TiN process.
Keywords
Chemical vapor deposition (CVD); Tetrakis(ethylmethylamido) titanium (TEMAT); Titanium nitride; Film; Thermal decomposition;
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