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A High Performance Flash Memory Solid State Disk  

Yoon, Jin-Hyuk (엠트론스토리지테크놀로지(주))
Nam, Eyee-Hyun (서울대학교 컴퓨터공학부)
Seong, Yoon-Jae (서울대학교 컴퓨터공학부)
Kim, Hong-Seok (서울대학교 컴퓨터공학부)
Min, Sang-Lyul (서울대학교 컴퓨터공학부)
Cho, Yoo-Kun (서울대학교 컴퓨터공학부)
Publication Information
Journal of KIISE:Computing Practices and Letters / v.14, no.4, 2008 , pp. 378-388 More about this Journal
Abstract
Flash memory has been attracting attention as the next mass storage media for mobile computing systems such as notebook computers and UMPC(Ultra Mobile PC)s due to its low power consumption, high shock and vibration resistance, and small size. A storage system with flash memory excels in random read, sequential read, and sequential write. However, it comes short in random write because of flash memory's physical inability to overwrite data, unless first erased. To overcome this shortcoming, we propose an SSD(Solid State Disk) architecture with two novel features. First, we utilize non-volatile FRAM(Ferroelectric RAM) in conjunction with NAND flash memory, and produce a synergy of FRAM's fast access speed and ability to overwrite, and NAND flash memory's low and affordable price. Second, the architecture categorizes host write requests into small random writes and large sequential writes, and processes them with two different buffer management, optimized for each type of write request. This scheme has been implemented into an SSD prototype and evaluated with a standard PC environment benchmark. The result reveals that our architecture outperforms conventional HDD and other commercial SSDs by more than three times in the throughput for random access workloads.
Keywords
Flash memory; SSD(Solid State Disk); flash translation layer(FTL); flash memory storage device platform;
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