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Design and Performance Evaluation of a Flash Compression Layer for NAND-type Flash Memory Systems  

Yim Keun Soo (삼성 종합기술원)
Bahn Hyokyung (이화여자대학교 컴퓨터학과)
Koh Kern (서울대학교 컴퓨터공학부)
Abstract
NAND-type flash memory is becoming increasingly popular as a large data storage for mobile computing devices. Since flash memory is an order of magnitude more expensive than magnetic disks, data compression can be effectively used in managing flash memory based storage systems. However, compressed data management in NAND-type flash memory is challenging because it supports only page-based I/Os. For example, when the size of compressed data is smaller than the page size. internal fragmentation occurs and this degrades the effectiveness of compression seriously. In this paper, we present an efficient flash compression layer (FCL) for NAND-type flash memory which stores several small compressed pages into one physical page by using a write buffer Based on prototype implementation and simulation studies, we show that the proposed scheme offers the storage of flash memory more than $140\%$ of its original size and expands the write bandwidth significantly.
Keywords
Flash memory; flash translation layer; flash compression layer; data compression;
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