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http://dx.doi.org/10.3745/KIPSTA.2003.10A.3.247

Design of Low Voltage 1.8V, Wide Range 50∼500MHz Delay Locked Loop for DDR SDRAM  

Koo, In-Jae (하이닉스 반도체 System-IC SoC설계팀)
Chung, Kang-Min (성균관대학교 전기전자컴퓨터공학부)
Abstract
This paper describes a Delay Locked Loop (DLL) with low supply voltage and wide lock range for Synchronous DRAM which employs Double Data Rate (DDR) technique for faster data transmission. To obtain high resolution and fast lock-on time, a new type of phase detector is designed. The new counter and lock indicator structure are suggested based on the Dual-clock dual-data Flip Flop (DCDD FF). The DCDD FF reduces the size of counter and lock indicator by about 70%. The delay line is composed of coarse and fine units. By the use of fast phase detector, the coarse delay line can detect minute phase difference of 0.2 nsec and below. Aided further by the new type of 3-step vernier fine delay line, this DLL circuit achieves unprecedented timing resolution of 25psec. This DLL spans wide locking range from 500MHz to 500MHz and generates high-speed clocks with fast lock-on time of less than 5 clocks. When designed using 0.25 um CMOS technology with 1.8V supply voltage, the circuit consumes 32mA at 500MHz locked condition. This circuit can be also used for other applications as well, such as synchronization of high frequency communication systems.
Keywords
DLL;
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