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http://dx.doi.org/10.6109/jkiice.2015.19.3.567

Design of a Fast 256Kb EEPROM for MCU  

Kim, Yong-Ho (Department of Electronic Engineering, Changwon National University)
Park, Heon (Department of Electronic Engineering, Changwon National University)
Park, Mu-Hun (Department of Electronic Engineering, Changwon National University)
Ha, Pan-Bong (Department of Electronic Engineering, Changwon National University)
Kim, Young-Hee (Department of Electronic Engineering, Changwon National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.19, no.3, 2015 , pp. 567-574 More about this Journal
Abstract
In this paper, a 50ns 256-kb EEPROM IP for MCU (micro controller unit) ICs is designed. The speed of data sensing is increased in the read mode by using a proposed DB sensing circuit of differential amplifier type which uses the reference voltage, and the switching speed is also increased by reducing the total DB parasitic capacitance as a distributed DB structure is separated into eight. Also, the access time is reduced reducing a precharging time of BL in the read mode removing a 5V NMOS transistor in the conventional RD switch, and the reliability of output data can be secured by obtaining the differential voltage (${\Delta}V$) between the DB and the reference voltages as 0.2*VDD. The access time of the designed 256-kb EEPROM IP is 45.8ns and the layout size is $1571.625{\mu}m{\times}798.540{\mu}m$ based on MagnaChip's $0.18{\mu}m$ EEPROM process.
Keywords
High Speed; MCU; EEPROM;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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