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http://dx.doi.org/10.6109/JKIICE.2009.13.1.115

Influence of substrate temperatures on optical and electrical properties of ZnO:Al thin films  

Chung, Yeun-Gun (전남대학교 정보소재공학과)
Joung, Yang-Hee (전남대학교 전기 및 반도체 공학과)
Kang, Seong-Jun (전남대학교 전기 및 반도체 공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.13, no.1, 2009 , pp. 115-120 More about this Journal
Abstract
The 3wt.% Al-doped zinc oxide (AZO) thin films were fabricated on Coming 1737 substrates at a fixed oxygen pressure of 200 mTorr with various substrate temperatures ($100\;{\sim}\;250^{\circ}C$) by using pulsed laser deposition in order to investigate the microstructure, optical, and electrical properties of AZO thin films. All thin films were shown to be c-axis oriented, exhibiting only a (002) diffraction peak. The AZO thin film, fabricated at 200 mTorr and $250^{\circ}C$, showed the highest (002) orientation and the full width at half maximum (FWHM) of the (002) diffraction peak was $0.44^{\circ}$. The optical transmittance in the visible region was higher than 85 %. The Burstein-Moss effect, which shifts to a high photon energy, was observed. The electrical property indicated that the highest carrier concentration ($3.48{\times}10^{20}cm^{-3}$) and the lowest resistivity ($1.65{\times}10^{-2}{\Omega}cm$) were obtained in the AZO thin film fabricated at 200 mTorr and $250^{\circ}C$.
Keywords
TCO; Al-doped Zno; Pulsed laser deposition; Hall effect; Transmittance;
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