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http://dx.doi.org/10.6109/jkiice.2008.12.9.1599

Analysis of Tunneling Transition by Characteristics of Gate Oxide for Nano Structure FinFET  

Jung, Hak-Kee (군산대학교 전자정보공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.12, no.9, 2008 , pp. 1599-1604 More about this Journal
Abstract
In this paper, it has been analyzed how transport characteristics is influenced on gate oxide properties in the subthreshold region as nano structure FinFET is fabricated. The analytical model is used to derive transport model, and Possion equation is used to obtain analytical model. The thermionic emission and tunneling current to have an influence on subthreshold current conduction are analyzed for nano-structure FinFET, and subthreshold swings of this paper are compared with those of two dimensional simulation to verify this model. As a result, transport model presented in this paper is good agreement with two dimensional simulation model, and this study shows that the transport characteristics have been changed by gate oxide properties. As gate length becomes smaller, funneling characteristics, one of the most important transport mechanism, have been analyzed.
Keywords
FinFET;
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1 D.S.Havaldar, G.Katti, N.DasGupta and A.DasGupta, "Subthreshold Current Model of FinFETs Based on Analytical Solution of 3-D Poisson's Equation," IEEE Trans. Electron Devices, vol. 53, no.4, 2006
2 Q.Chen, B.Agrawal, J.D.Mein이, "A Compre -hensive Analytical Subthreshold Swing(S) Model for Double-Gate MOSFETs," IEEE Trans. Electron Devices, vol. 49, no.6, pp.1086-1090, 2002   DOI   ScienceOn
3 G.Katti, N.DasGupta and A.DasGupta, "Threshold Voltage Model for Mesa-Isolated Small Geometry Fully Depleted SOI MOSFETs Based on Analytical Solution of 3-D Poisson's Equation," IEEE Trans. Electron Devices, vol. 51, no.7, 2004
4 D.Munteanu and J.L.Autran,"Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices," Solid-State Electronics, vol.47, pp.1219-1225, 2003   DOI   ScienceOn
5 H.K.Jung and S.Dimitrijev, "Analysis of Subthreshold Carrier Transport for Ultimate Double Gate MOSFET," IEEE Trans. Electron Devicesm, vol. 53, no.4, pp.685-691, 2006   DOI   ScienceOn