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http://dx.doi.org/10.6109/jkiice.2008.12.12.2247

Correlation between the Potential Barrier and Variation of Temperature on SiOC thin film  

Oh, Teresa (청주대학교 반도체설계공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.12, no.12, 2008 , pp. 2247-2252 More about this Journal
Abstract
The SiOC films as the carbon doped silicon oxide film were prepared with the variation of flow rater ratios by plasma enhanced chemical vapor deposition. The samples were analyzed by the fourier transform infrared spectroscopy, I-V measurement and scanning electron microscopy. The samples were shown the chemical shift according to the flow rate ratios, and the grain did not formed at the sample with hybrid properties. The leakage currents decreased according to the increasing of the substrate temperature at the sample with hybrid properties, but the potential barrier increased.
Keywords
low-k materials; C-H bond elongation; C-H bond condensation; chemical shift;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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