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http://dx.doi.org/10.6109/jkiice.2007.11.10.1910

Accurate parameter extraction method for FD-SOI MOSFETs RF small-signal model including non-quasi-static effects  

Kim, Gue-Chol (Matushita Electric Works 중앙연구소)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.11, no.10, 2007 , pp. 1910-1915 More about this Journal
Abstract
An accurate and simple method to extract equivalent circuit parameters of fully-depleted silicon-on-insulator MOSFETs small-signal modeling operating at RF frequencies including the non-quasi static effects is presented in this article. The advantage of this method is that a unique and physically meaningful set of intrinsic equivalent circuit parameters is extracted by de-embedding procedure of extrinsic elements such as parasitic capacitances and resistances of MOSFETs from measured S-parameters using simple Z- and Y- matrices calculations. The calculated small-signal parameters using the presented extraction method give modeled Y-parameters which are in good agreement with the measured Y-parameters from 0.5 to 20GHz.
Keywords
MOSFET; RF; small-signal modeling; SOI; Non-Quasi-Static effects;
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