1 |
C. Snowden, 'Large-signal microwave characterization of AIGaAs/GaAs HBT's based on a physics-based electron-ther mal model,' IEEE Trans. Microwave Theory and Tech, vol. MTT-45, no.l, pp. 58-71, January 1997
|
2 |
M. Rudolph, et aI, 'Scalable GaInP/GaAs HBT Large-signal Model,' 2000 IEEE MTTT Symposium Digest, pp.753-756
|
3 |
Y. Suh, et al, 'Direct extraction method for internal equivalent circuit parameters of HBT small-signal hybrid-pi model '2000 IEEE-MTT Symposium Digest, pp.1 401-1404
|
4 |
Y. Govert etal, 'A physical, yet simple, small signla equivalent circuit for the hetero-junction bipolar transistor,' IEEETrans. MTT, vol. 45, no. 1, Jan. 1997, pp. 149-153
|
5 |
H. Ghaddab, F. M. Ghannouchi, F. Choubani, and A. Bouallegue, 'Small signal modeling of HBT's using a hybrid optimization/ statistical technique,' IEEE Trans.on MTT, vol. 46, no.3, pp. 292-298, Mar. 1998
DOI
ScienceOn
|