Browse > Article
http://dx.doi.org/10.9713/kcer.2016.54.6.775

A Study of Optimum Growth Rate on Large Scale Ingot CCz (Continuous Czochralski) Growth Process for Increasing a Productivity  

Lee, Yu-Ri (Department of Chemical Engineering, Yeungnam University)
Roh, Ji-Won (Department of Chemical Engineering, Yeungnam University)
Jung, Jae Hak (Department of Chemical Engineering, Yeungnam University)
Publication Information
Korean Chemical Engineering Research / v.54, no.6, 2016 , pp. 775-780 More about this Journal
Abstract
Recently, photovoltaic industry needs a new design of Czochralski (Cz) process for higher productivity with reasonable energy consumption as well as solar cell's efficiency. If the process uses the large size reactor for increasing productivity, it is possible to produce a 12-inch, rather than the 8-inch. Also the continuous czochralski process method can be maximized to increase productivity. In this study, it was designed to improve the yield value of ingot with optimal condition which reduce consumption of electrical power. It has increased the productivity of the 12-inch ingot process condition by using CFD simulation. I have found optimal growth rate, by comparing each growth rate the interface shape, Temperature gradient, power consumption. As a result, the optimal process parameters of the growth furnace has been derived to improve for the productivity and to reduce energy. This study will contribute to the improvement of the productivity in the solar cell industry.
Keywords
Ingot; CFD; Solar cell; CCz; Large scale ingot;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 Sinno, T. et al., "Defect engineering of Czochralski single-crystal silicon," Mater. Sci. Eng. Reports, 28(5-6), 149-198(2000).   DOI
2 Tomzig, E. et al., "Challenges for Economical Growth of High Quality 300 mm CZ Si Crystals," Microelectron. Eng., 45(2), 113-125(1999).   DOI
3 Dunham, S. T. and Nelson, J. S., "Semiconductor Process and Device Performance Modeling," Mater. Res. Soc. Symp. Proc., 490, 181(1998).
4 Lee, J. S. and Kim, K. H., "Solar Cell Engineering," Book Publication GREEN(2007).
5 University of Incheon, "Development of defect controlling methods in Si single crystals," Report(1995).
6 Jeong, H. B., "Numerical Study on a Single Crystal Growth using a Czochralski Method," Inha University Graduate School, Master's Thesis(2008).
7 Lee, S.-H. et al., "A Cold Model Experiment on the Thermal Convection in the Czochralski Silicon Single Crystal Growth Process," J. of Korean Association of Crystal Growth, 9(2), 149-156(1999).
8 Kalaev, V. V. et al. "Calculation of Bulk Defects in CZ Si Growth: Impact of Melt Turbulent Fluctuations," J. Cryst. Growth, 250(1-2), 203-208(2003).   DOI
9 N. Van den Bogaert and Dupret, F., "Dynamic Global Simulation of the Czochralski Process II. Analysis of the Growth of a Germanium Crystal," J. Cryst. Growth, 171(1-2), 77-93(1997).   DOI
10 Jeong, H. B., "Numerical Study on Effect of Crucible and Crystal Rotation on Flow Field in Czochralski Growth Process," The Korean Institute of Metals and Materials, 1, 184(2007).
11 Lee, E. K., "Optimal Design of Cz Process for Increasing a Productivity of Single Crystal Si Solar Cell Ingot," Korean Chemical Engineering Research, 49(4), 432-437(2011).   DOI
12 Jung, Y. J., "Study of Oxygen Concentration and Interface Optimization in Czochralski Process for Production of Low-Cost, High-Quality Ingot," Yeungnam University Graduate School, Master's Thesis(2014).
13 Jeon, B. C., "Optimal design for maximizing ingot production rate in large diameter continuous CZ process," Yeungnam University Graduate School, Master's Thesis(2015).