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Surface Morphology and Hole Filling Characteristics of CVD Copper  

Kim, Duk-Soo (Department of Chemical Engineering and The research Institute of Catalysis, Chonnam National University)
Sunwoo, Changshin (Department of Chemical Engineering and The research Institute of Catalysis, Chonnam National University)
Park, Don-Hee (Department of Chemical Engineering and The research Institute of Catalysis, Chonnam National University)
Kim, Jin-Hyuk (Department of Materials Science & Engineering, Chonnam National University)
Kim, Do-Heyoung (Department of Chemical Engineering and The research Institute of Catalysis, Chonnam National University)
Publication Information
Korean Chemical Engineering Research / v.43, no.1, 2005 , pp. 98-102 More about this Journal
Abstract
This article describes a study of chemical vapor deposition (CVD) of copper thin films on TiN substrates using (HFAC)Cu(DMB) as a precursor. The surface morphology and conformality of the Cu films as functions of substrate temperature and the presence or absence of iodine have been investigated. The surface roughness was increased significantly along with decrement of the step coverage by increasing the deposition temperature. The highest conformal films with the lowest surface roughness were obtained using the process of copper CVD, where iodine vapor were discretely introduced into the reactor during the growth of copper.
Keywords
Copper; CVD; Conformality; Surface Morphology;
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