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http://dx.doi.org/10.14775/ksmpe.2014.13.6.139

System calibration method for Silicon wafer warpage measurement  

Kim, ByoungChang (School of Mechanical Engineering, KYUNGNAM UNIV.)
Publication Information
Journal of the Korean Society of Manufacturing Process Engineers / v.13, no.6, 2014 , pp. 139-144 More about this Journal
Abstract
As a result of a mismatch of the residual stress between both sides of the silicon wafer, which warps and distorts during the patterning process. The accuracy of the warpage measurement is related to the calibration. A CCD camera was used for the calibration. Performing optimization of the error function constructed with phase values measured at each pixel on the CCD camera, the coordinates of each light source can be precisely determined. Measurement results after calibration was performed to determine the warpage of the silicon wafer demonstrate that the maximum discrepancy is $5.6{\mu}m$ with a standard deviation of $1.5{\mu}m$ in comparison with the test results obtained by using a Form TalySurf instrument.
Keywords
silicon wafer; warpage measurement; CCD camera; Fringe pattern; calibration; system parameter;
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Times Cited By KSCI : 1  (Citation Analysis)
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