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http://dx.doi.org/10.5139/JKSAS.2003.31.10.073

Stress gradient relaxation and property modification of polysilicon films by ion implantation  

Seok, Ji-Won (서울대학교 기계항공공학부)
Gang, Tae-Jun (서울대학교 기계항공공학부)
Lee, Sang-Jun (서울대학교 기계항공공학부)
Lee, Jae-Hyeong (한국원자력연구소)
Lee, Jae-Sang (한국원자력연구소)
Han, Jun-Hui (한국표준과학연구소)
Lee, Ho-Yeong (서울대학교 기계항공공학부)
Kim, Yong-Hyeop (서울대학교 기계항공공학부)
Publication Information
Journal of the Korean Society for Aeronautical & Space Sciences / v.31, no.10, 2003 , pp. 73-78 More about this Journal
Abstract
MEMS technology in the field of aerospace engineering is more important with light weight and high resolution. Therefore the investigation of thin films properties is issued and the residual stress of thin filrns is one of the important problems to solve. Ion implantation without thermal annealing is applied for the stress gradient relaxation of LPCVD polysilicon films used as the structural part in MEMS. He+ and Ar+ ion implantations reduce the stress gradient of polysilicon films. The property modification of polysilicon films by ion implantation is also investigated. The elastic modulus and hardness of polysilicon films with ion implantation is studied by CSM method which is an advanced nano-indentation method. Ion implantation decreases the elastic modulus and hardness of polysilicon films. However, they are improved with increasing ion dose.
Keywords
MEMS; Ion implantation; Residual stress; Polysilicon; Elastic modulus; Hardness;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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