Browse > Article
http://dx.doi.org/10.1007/s13391-012-2002-5

Electrical Properties of Lead-Free $0.98(Na_{0.5}K_{0.5}Li_{0.1})NbO_{3}-0.02Ba(Zr_{0.52}Ti_{0.48})O_{3}$ Ceramics by Sintering Temperature  

Lee, Seung-Hwan (Dept. of Electronics Materials Engineering, Kwangwoon University)
Kim, Hyun-Ju (Dept. of Electronics Materials Engineering, Kwangwoon University)
Lee, Young-Hie (Dept. of Electronics Materials Engineering, Kwangwoon University)
Publication Information
Electronic Materials Letters / v.8, no.3, 2012 , pp. 289-293 More about this Journal
Abstract
NKLN-BZT ceramic microstructure and electric properties were studied with a special emphasis on the influence of sintering temperature in the range of $1070^{\circ}C-1110^{\circ}C$. The result of XRD analysis indicates that the orthorhombic phase was found at the temperature of $1090^{\circ}C$, and those samples show the maximum values of piezoelectric coefficient ($d_{33}\;=\;200\;_{\rho}C/N$), electromechanical coupling coefficient ($k_{\rho}$ = 38%), and remnant polarization ($P_{r}\;=\;24\;{\mu}C/cm^{2}$).
Keywords
piezoelectric properties; dielectric properties; NKLN-BZT;
Citations & Related Records
Times Cited By KSCI : 11  (Citation Analysis)
Times Cited By Web Of Science : 1  (Related Records In Web of Science)
연도 인용수 순위
1 P. Hansen, D. Hennings, and H. Schreinemacher, J. Am. Ceram. Soc. 81, 1369 (1998).
2 H. Kishi, N. Kohzu, and J. Sugino, J. Eur. Ceram. Soc. 20, 1997 (2000).   DOI   ScienceOn
3 S. P. Nam, S. G. Lee, S. G. Bae, and Y. H. Lee, J. Electr. Eng. Technol. 2, 98 (2007).   DOI   ScienceOn
4 S. Anwar, P. R. Sagdeo, and N. P. Lalla, Solid State Commun. 138, 331 (2006).   DOI   ScienceOn
5 B. J. Sung, E. W. Lee, and J. G. Lee, J. Electr. Eng. Technol. 3, 293 (2008).   DOI   ScienceOn
6 I. J. Cho, K. S. Yun, and H. J. Nam, J. Electr. Eng. Technol. 6, 119 (2011).   DOI   ScienceOn
7 M. Matsubara, T. Yamaguchi, K. Kikuta, and S. Hirano, Jpn. J. Appl. Phys. 43, 7159 (2004).   DOI
8 W. K. Jeung, S. M. Choi, and Y. J. Kim, J. Electr. Eng. Technol. 1, 263 (2006).   DOI   ScienceOn
9 S. J. Zhang, R. Xia, T. R. Shrout, G. Z. Zang, and J. F. Wang, J. Appl. Phys. 100, 104108 (2006).   DOI
10 H. J. Bae, J. Koo, and J. P. Hong, J. Electr. Eng. Technol. 1, 120 (2006).   DOI   ScienceOn
11 G. L. Yuan and S. W. Or, Appl. Phys. Lett. 88, 062905 (2006).   DOI   ScienceOn
12 M. S. Kim, Y. M. Jeon, Y. M. Im, Y. H. Lee, and T. H. Nam, Trans. Electr. Electron. Mater. 12, 20 (2011).   DOI   ScienceOn
13 S. H. Lee, J. Electr. Eng. Technol. 2, 102 (2007).   DOI   ScienceOn
14 H.-J. Noh, S. G. Lee, and S. P. Nam, J. Electr. Eng. Technol. 4, 527 (2009).   DOI   ScienceOn
15 V. V. Thang, I. S. Kim, S. J. Jeong, M. S. Kim, and J. S. Song, J. Electr. Eng. Technol. 6, 671 (2011).   DOI   ScienceOn
16 K. S. Chang, S. M. Kang, K. G. Park, S. H. Shin, H. S. Kim, and H. S. Kim, J. Electr. Eng. Technol. 7, 75 (2012).   DOI   ScienceOn
17 K. A. Fonteyn, A. Belahcen, P. Rasilo, R. Kouhia, and A. Arkkio, J. Electr. Eng. Technol. 7, 336 (2012).   DOI   ScienceOn