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http://dx.doi.org/10.6111/JKCGCT.2014.24.1.008

Synthesis of Ga2O3 powders by precipitation method  

Jung, Jong-Yeol (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
Kim, Sang-Hun (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
Kang, Eun-Tae (School of Nano and Advanced Materials Engineering, Gyeongsang National University)
Kim, Jin-Ho (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
Han, Kyu-Sung (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
Hwang, Kwang-Teak (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
Cho, Woo-Seok (Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.24, no.1, 2014 , pp. 8-14 More about this Journal
Abstract
In this study, we investigated synthesis and characteristics of gallium oxide ($Ga_2O_3$) powders prepared by precipitation method. $Ga_2O_3$ powders were synthesized using $Ga(NO_3)_3$ as a starting material and $NH_4OH$ as a precipitant. The oxidation temperature of $Ga(OH)_3$ and phase transition temperature of $Ga_2O_3$ was revealed using TG-DSC analysis. The crystal structural change of $Ga_2O_3$ powders was investigated by XRD analysis. The morphologies and size distributions of $Ga_2O_3$ particles were analyzed using SEM.
Keywords
Precipitation; Gallium oxide; Aging; InGaZnO;
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Times Cited By KSCI : 4  (Citation Analysis)
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