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Utilization of the surface damage as gettering sink in the silicon wafers useful for the solar cell fabrication  

Kim, Dae-Il (Department of Material Science & Engineering, University of Incheon)
Kim, Young-Kwan (Department of Material Science & Engineering, University of Incheon)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.16, no.2, 2006 , pp. 66-70 More about this Journal
Abstract
Various kind of structural defects are observed to be present on the oxidized surface of the silicon crystal which was previously damaged mechanically. The formation of such defects was found to depend on the amount of damage induced and the temperature of thermal oxidation. It was confirmed by the measurement of minority carrier life time that gettering capability decreases as the size of the defects increase. The strained layer which is formed due to smaller amount of damage or lower oxidation temperature believed to has higher capability of gettering over defects like dislocation loops or stacking faults.
Keywords
Defects; Strained layer; Silicon crystal; Gettering;
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