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http://dx.doi.org/10.3740/MRSK.2003.13.10.697

Infrared Radiation Properties for SiO2 Films Made by Sol-Gel Process  

Kang, Byung-chul (Korea Institute of Construction Materials)
Kim, Young-geun (Korea Institute of Construction Materials)
Kim, Ki-ho (Dept. of Materials Engineering ChungBuk National University)
Publication Information
Korean Journal of Materials Research / v.13, no.10, 2003 , pp. 697-702 More about this Journal
Abstract
FT-IR and thermograph were used to investigate the infrared radiation characteristics of $SiO_2$film made by the sol-gel method. FT-IR spectrum of the $SiO_2$film showed high infrared absorption by Si-O-Si vibration at 1220, 1080, 800 and cm$460^{-1}$ The infrared absorption and radiation wavelength ranges of the $SiO_2$film measured by the integration method coincided with the reflection method, and the infrared emissivity was 0.65, equally. Depending on the bonding of elements, the infrared emissivity was high in the wavelength range where the infrared absorption rate was high, that follows the Kirchhoff's law. The emissivity showed the highest value in the wavelength range between $8∼10\mu\textrm{m}$. $SiO_2$film was considered as an efficient materials for infrared radiator at temperature below 10$0^{\circ}C$. The heat radiation temperature was $117^{\circ}C$ for the aluminum plate, but $146^{\circ}C$ for the $SiO_2$film after 7 minutes heat absorption, consiquently, $29^{\circ}C$ higher than the former.
Keywords
$SiO_2$film; Infrared emissivity; Radiance; Reflectivity; FT-IR;
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