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http://dx.doi.org/10.3740/MRSK.2003.13.10.640

Characteristics of NiCr Thin Films Prepared by rf Magnetron Sputtering as Absorption Layer for Infrared Sensors  

Hur, Sung-Gi (Department of Materials Engineering, Chungnam National University)
Choi, Eun-Suck (Department of Materials Engineering, Chungnam National University)
Yoon, Soon-Gil (Department of Materials Engineering, Chungnam National University)
Publication Information
Korean Journal of Materials Research / v.13, no.10, 2003 , pp. 640-644 More about this Journal
Abstract
NiCr thin films were fabricated by rf magnetron sputtering for applying to both the top electrode and absorption layer on Pb(Zr, Ti)O$_3$(PZT) thin films for infrared sensors. The rms roughness and resistivity of NiCr films prepared with Ni power of 80 W and Cr power of 50 W showed the most stable oxidation resistance after annealing at $600^{\circ}C$ for 5 min in oxygen ambient. The rms roughness and resistivity of NiCr films annealed at $V^{\circ}C$ in oxygen ambient were about 2$0\AA$ and $70 \mu$Ω-cm, respectively. As-deposited Ni/PZT/Pt and NiCr (Ni 80 W, Cr 50 W)/PZT/Pt structures showed well saturated hysteresis loops. However, in case of the samples annealed at $500^{\circ}C$ in oxygen ambient, only NiCr/PZT/Pt showed saturated loops having a remanent polarization of 20$\mu$C/$\textrm{cm}^2$. Ultra-thin NiCr films showed a possibility as a top electrode for infrared sensors.
Keywords
NiCr alloy; roughness; resistivity; infrared sensor; Pb(Zr, Ti)$O_3$;
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