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http://dx.doi.org/10.4283/JKMS.2010.20.6.228

Thickness Dependence of Microwave Permeability in CoFeHfO Thin Films  

Lee, Young-Suk (Department of Materials Science and Engineering, Chungnam National University)
Kim, Cheol-Gi (Department of Materials Science and Engineering, Chungnam National University)
Kim, Dong-Young (Department of Physics, Andong National University)
Abstract
The microwave permeability was measured in order to analyze the thickness dependence of loss properties in CoFeHfO thin films with varying thickness of t = 57~1368 nm. A single resonance peak (P1) at 2.95 GHz was appeared in the samples with thickness less than 405 nm, while second resonance peak (P2) at 547MHz was additionally appeared in the samples with thickness greater than 405 nm. The P2 was originated by the angle distribution of the easy axis, which was confirmed from the measured results of the change of imaginary permeability with applied magnetic field in the sample of 1368 nm thickness and low field torque curves. If the second peaks can be reduced by minimizing the angle distribution of the easy axis, the CoFeHfO thin films with thickness greater than 400 nm can be used for the compact microwave devices operated at up to 2 GHz ranges.
Keywords
microwave permeability; resonance frequency; saturation magnetization; anisotropy field;
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