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http://dx.doi.org/10.7840/kics.2013.38C.6.540

Adaptive Quantization Scheme for Multi-Level Cell NAND Flash Memory  

Lee, Dong-Hwan (서울대학교 전기 정보 공학부 멀티미디어 시스템 연구실)
Sung, Wonyong (서울대학교 전기 정보 공학부 멀티미디어 시스템 연구실)
Publication Information
The Journal of Korean Institute of Communications and Information Sciences / v.38C, no.6, 2013 , pp. 540-549 More about this Journal
Abstract
An adaptive non-uniform quantization scheme is proposed for soft-decision error correction in NAND flash memory. Even though the conventional maximizing mutual information (MMI) quantizer shows the optimal post-FEC (forward error correction) bit error rate (BER) performance, this quantization scheme demands heavy computational overheads due to the exhaustive search to find the optimal parameter values. The proposed quantization scheme has a simple structure that is constructed by only six parameters, and the optimal values of them are found by maximizing the mutual information between the input and the output symbols. It is demonstrated that the proposed quantization scheme improves the BER performance of soft-decision decoding with only small computational overheads.
Keywords
NAND flash memory; Quantizer; Maximum mutual information (MMI); Error correcting code (ECC);
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