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Modulation Code for Removing Error Patterns on 4-Level NAND Flash Memory  

Park, Dong-Hyuk (숭실대학교 정보통신전자공학부 정보저장 및 통신 연구실)
Lee, Jae-Jin (숭실대학교 정보통신전자공학부 정보저장 및 통신 연구실)
Yang, Gi-Ju (동국대학교 정보통신공학과)
Publication Information
The Journal of Korean Institute of Communications and Information Sciences / v.35, no.12C, 2010 , pp. 965-970 More about this Journal
Abstract
In the NAND flash memory storing two bits per cell, data is discriminated among four levels of electrical charges. We refer to these four levels as E, P1, P2, and P3 from the low voltage. In the statistics, many errors occur when E and P3 are stored at the next cells. Therefore, we propose a coding scheme for avoiding E-P3 or P3-E data patterns. We investigate two modulation codes for 9/10 code (9 bit input and 5 symbol codeword) and 11/12 code (11 bit input and 6 symbol codeword).
Keywords
2bits/cell NAND Flash Memory; Avoidance Error Pattern Code; E-P3 or P3-E Error Pattern;
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