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Channel Modeling for Multi-Level Cell Memory  

Park, Dong-Hyuk (숭실대학교 정보통신전자공학부 정보저장 및 통신 연구실)
Lee, Jae-Jin (숭실대학교 정보통신전자공학부 정보저장 및 통신 연구실)
Publication Information
The Journal of Korean Institute of Communications and Information Sciences / v.34, no.9C, 2009 , pp. 880-886 More about this Journal
Abstract
Recently, the memory is used in many electronic devices, thus, the many researchers make a study of the memory. To increase a storage capacity per memory block, the researchers study for reducing the fabrication process of memory and multi-level cell memory which is storing more than 2-bits in a cell. However, the multi-level cell memory has low bit-error rates by various noises. In this paper, we study the noise of multi-level cell memory, and we propose the channel model of multi-level cell memory.
Keywords
Multi-Level Cell Memory; Memory Channel; Coupling Effect;
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