Gigabit-capable WDM-PON Using Long-Wavelength VCSEL
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박상민
(인하대학교 정보통신공학과 광정보통신 연구실)
이승걸 (인하대학교 정보통신공학과 광정보통신 연구실) 오범환 (인하대학교 정보통신공학과 광정보통신 연구실) 박세근 (인하대학교 정보통신공학과 광정보통신 연구실) 이일항 (인하대학교 정보통신공학과 광정보통신 연구실) |
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Transforming Tucker's linearized laser rate equation to a form that has a single solution regime
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DOI ScienceOn |
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GaInNAs-GaAs long -wavelength Vertical -cavity surface-emitting laser diodes
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DOI |
3 |
Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts
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DOI ScienceOn |
4 |
Numerical modeling of intensity and phase noise in semiconductor lasers
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DOI ScienceOn |
5 |
Derivation of analytical expressions for the bit-error probability in lightwave systems with optical amplifiers
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DOI ScienceOn |
6 |
1.55um vertical-cavity laser arrays for wavelength - division multiplexing
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DOI ScienceOn |
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CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55um VCSEL grown by MOCVD
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Vertical cavity lasers for telecom application
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Progress and prospects of long-wavelength VCSELs
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An evaluation of architectures incorporating wavelength division multiplexing for broad-band fiber access
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DOI |
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Up to 10 Gbit/s data transmission with 1.3μm wavelength InGaAsN VCSELs
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Multifrequency lasers and applications in WDM networks
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14 |
64℃ continuous-wave operation of 1.5μm vertical-cavity laser
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DOI ScienceOn |
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50km error-free 10Gbit/s WDM transmission using directly Modulated long-wavelength VCSELs
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1.54-μm vertical-cavity surface-emitting laser transmission at 2.5 Gb/s
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DOI ScienceOn |
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1.55μm Buried -Hetrostructure VCSELs with InGaAsP/InP-GaAs/AlAs DBRs on a GaAs Substrate
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DOI ScienceOn |
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