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Design and Fabrication of Forward -3㏈ Directional Coupler Using Asymmetrical Coupled Lines with Mentalization Thickness  

홍익표 (공주대학교 정보통신공학부)
윤남일 (연세대학교 전기전자공학부 전파통신연구실)
육종관 (연세대학교 전기전자공학부 전파통신연구실)
Abstract
In this paper, forward-wave -3㏈ directional coupler with finite-thickness conductor and asymmetrical coupled lines are designed and experimentally verified using mode-matching based design methodology. Most of studies published in the literatures about the coupled lines are mainly concentrated on the adjustment of coupling amount by changing various geometric configurations. The analysis results in this paper show that thicker metalization requires reduced coupler length in the forward-wave directional coupler composed of asymmetrical coupled lines. Several forward-wave directional -3 ㏈ couplers with finite metalization thickness composed of asymmetrical coupled microstrip lines have been designed in the 5 ㎓ based on proposed design method. The measured data show -4.05㏈∼-4.09㏈ coupling at center frequency which is very closed to design value. The tight coupling has been implemented with accurate design methodology which take mentalization thickness into account.
Keywords
Metalization thickness; Asymmetrical coupled lines; Directional coupler;
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