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http://dx.doi.org/10.4313/TEEM.2015.16.5.254

Performance Optimization of LDMOS Transistor with Dual Gate Oxide for Mixed-Signal Applications  

Baek, Ki-Ju (Department of Semiconductor Engineering, Chungbuk National University)
Kim, Yeong-Seuk (Department of Semiconductor Engineering, Chungbuk National University)
Na, Kee-Yeol (Department of Semiconductor Electronics, Chungbuk Provincial College)
Publication Information
Transactions on Electrical and Electronic Materials / v.16, no.5, 2015 , pp. 254-259 More about this Journal
Abstract
This paper reports the optimized mixed-signal performance of a high-voltage (HV) laterally double-diffused metaloxide-semiconductor (LDMOS) field-effect transistor (FET) with a dual gate oxide (DGOX). The fabricated device is based on the split-gate FET concept. In addition, the gate oxide on the source-side channel is thicker than that on the drain-side channel. The experiment results showed that the electrical characteristics are strongly dependent on the source-side channel length with a thick gate oxide. The digital and analog performances according to the source-side channel length of the DGOX LDMOS device were examined for circuit applications. The HV DGOX device with various source-side channel lengths showed reduced by maximum 37% on-resistance (RON) and 50% drain conductance (gds). Therefore, the optimized mixed-signal performance of the HV DGOX device can be obtained when the source-side channel length with a thick gate oxide is shorter than half of the channel length.
Keywords
High-voltage laterally double-diffused metal-oxide-semiconductor (HVLDMOS); MOSFET; Dual gate oxide (DGOX); Mixed-signal application;
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