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http://dx.doi.org/10.4313/TEEM.2015.16.5.227

Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review  

Balaji, Nagarajan (Department of Energy Science, Sungkyunkwan University)
Hussain, Shahzada Qamar (Department of Energy Science, Sungkyunkwan University)
Park, Cheolmin (Department of Energy Science, Sungkyunkwan University)
Raja, Jayapal (College of Information and Communication Engineering, Sungkyunkwan University)
Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University)
Jeyakumar, R. (Physics of Energy Harvesting Division, CSIR-National Physical Laboratory)
Publication Information
Transactions on Electrical and Electronic Materials / v.16, no.5, 2015 , pp. 227-233 More about this Journal
Abstract
To reduce the cost of solar electricity, the crystalline-silicon (c-Si) photovoltaic industry is moving toward the use of thinner wafers (100 μm to 200 μm) to achieve a high efficiency. In this field, it is imperative to achieve an effective passivation method to reduce the electronic losses at the c-Si interface. In this article, we review the most promising surface passivation schemes that are available for high-efficiency solar cells.
Keywords
Passivation; $SiO_2$; $SiN_x$; $Al_2O_3$;
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1 A. Richter, M. Hörteis, J. Benick, S. Henneck, M. Hermle,and S. W.Glunz, Proc. of the 35th IEEE Photovoltaic Specialists Conference (Honolulu, HI, 20–25 June 2010, IEEE, New York, 2010).
2 F. Kiefer, C. Ullzhofer, T. Brendemühl, N. P. Harder, R. Brendel, V. Mertens, S. Bordihn, C. Peters, and J. W. Müller, IEEE J. Photovoltaics, 1, 49 (2011). [DOI: http://dx.doi.org/10.1109/JPHOTOV. 2011.2164953]   DOI
3 H. Chang, C. Huang, P. Hsieh, W. Mo, S. Yu, C. Li, Energy Procedia 55 643 (2014). [DOI: http://dx.doi.org/10.1016/j.egypro.2014.08.038]   DOI
4 http://optics.org/news/5/6/24?utm_source=rss&utm_medium =rss&utm_campaign=solarcity-aims-big-with-silevo-acquisition-optics-org
5 D. Zielke, J. H. Petermann, F. Werner, B. Veith, R. Brendel, and J.Schmidt, Phys. Status Solidi (RRL), 5, 298 (2011. [DOI: http://dx.doi.org/10.1002/pssr.201105285]   DOI
6 M. Hofmann, S. Kambor, C. Schmidt, D. Grambole, J. Rentsch, S. Glunz, and R. Preu, Advances in Opto. Electronics (2008).
7 G. Choi, N. Balaji, C. Park, J. Choi, S. Lee, J. Kim, M. Ju, Y. J. Lee, and J. Yi, Vaccum, 101, 22 (2014). [DOI: http://dx.doi.org/10.1016/j.vacuum.2013.07.003]   DOI
8 M. Schaper, J. Schmidt, H. Plagwitz, and R. Brendel, Prog.Photovolt: Res.Appl., 13, 381 (2005). [DOI: http://dx.doi.org/10.1002/pip.641]   DOI
9 S. Gatz, H. Plagwitz, P. P. Altermatt, B. Terheiden, and R. Brendel, Appl. Phys. Lett., 93, 173502 (2008). [DOI: http://dx.doi. org/10.1063/1.3009571]   DOI
10 C. Leendertz, N. Mingirulli, T. F. Schulze, J. P. Kleider, B. Rech, and L. Korte, Appl. Phys. Lett., 98, 202108 (2011). [DOI: http://dx.doi.org/10.1063/1.3590254]   DOI
11 T. F. Schulze, H. N. Beushausen, C. Leendertz, A. Dobrich, B. Rech, and L. Korte, Appl. Phys. Lett., 96, 25102 (2010). [DOI:http://dx.doi.org/10.1063/1.3455900]   DOI
12 S. de Wolf, B. Demaurex, A. Descoeudres, and C. Ballif, Phys. Rev. B, 83, 233301 (2011). [DOI: http://dx.doi.org/10.1103/PhysRevB.83.233301]   DOI
13 http://news.panasonic.com/press/news/official.data/data.dir/2014/04/en140410-4/en140410-4.html
14 R. Jeyakumar, T. K. Maiti, M. M. Khader, A. Verma, R. Nekovei, J. Kumar, N. Balaji, and J. S. Yi, Sci. Reports, June 2015 (under review).
15 B. Hoex, S.B.S. Heil, E. Langereis, M.C.M. Van de Sanden, and W.M.M. Kessels, Appl. Phys. Lett., 89, 042112 (2006). [DOI:http://dx.doi.org/10.1063/1.2240736]   DOI
16 B. Hoex, J. Schmidt, P. Pohl, M.C.M. Van de Sanden, and W.M.M. Kessels, J. Appl. Phys., 104, 044903 (2008). [DOI: http://dx.doi.org/10.1063/1.2963707]   DOI
17 S. W. Glunz, J. Benick, D. Biro, M. Bivour, M. Hermle, D. Pysch, M.Rauer, C. Reichel, A. Richter, M. Rudiger, C. Schmiga, D.Suwito,A. Wolf, and R. Preu, Proc. of the 35th IEEE Photovoltaic Secialists Conference (Honolulu, Hawaii, 2010) p. 50–56.
18 J. Benick, B. Hoex, M. C. M. van de Sanden, W. M. M. Kessels, O. Schultz, and S. W. Glunz, Appl. Phys. Lett.92, 253504 (2008). [DOI: http://dx.doi.org/10.1063/1.2945287]   DOI
19 J. Benick, A. Richter, M. Hermle, and S. W. Glunz, Phys. Status Solidi (RRL), 3, 233 (2009). [DOI: http://dx.doi.org/10.1002/pssr.200903209]   DOI
20 G. Dingemans, M.C.M. Van de Sanden, and W. M. M. Kessels, Electrochem. Solid-State Lett., 13, H76 (2010). [DOI: http://dx.doi.org/10.1149/1.3276040]   DOI
21 G. Dingemans, R. Seguin, P. Engelhart, M.C.M. Van de Sanden, and W. M. M. Kessels, Phys. Status Solidi (RRL), 4, 10 (2010). [DOI: http://dx.doi.org/10.1002/pssr.200903334]   DOI
22 J. Schmidt, B. Veith, and R. Brendel, Phys. Status Solidi (RRL), 3, 287 (2009). [DOI: http://dx.doi.org/10.1002/pssr.200903272]   DOI
23 P. Saint-Cast, J. Benick, D. Kania, L. Weiss, M. Hofmann, J. Rentsch, R. Preu, and S. W. Glunz, IEEE Electron Dev. Lett., 31, 695 (2010). [DOI: http://dx.doi.org/10.1109/LED.2010.2049190]   DOI
24 J. Hong, W.M.M. Kessels, W. J. Soppe, W.W.Weeber, W. M. Amoldbik, and M.C.M. Van de Sanden, J. Vac. Sci. Technol. B, 21, 2123 (2003). [DOI: http://dx.doi.org/10.1116/1.1609481]   DOI
25 J. Robertson, Philos. Mag. B, 69, 307 (1994). [DOI: http://dx.doi. org/10.1080/01418639408240111]   DOI
26 S. De Wolf, G. Agostinelli, G. Beaucarne, and P. Vitanov,J. Appl. Phys., 97, 063303 (2005). [DOI: http://dx.doi.org/10.1063/1.1861138]   DOI
27 W. L. Warren, J. Electrochem. Soc., 139, 880 (1992). [DOI: http://dx.doi.org/10.1149/1.2069319]   DOI
28 W. L. Warren, J. Kanicki, J. Robertson, E. H. Poindexter, and P. J. McWhorter, J. Appl. Phys., 74, 4034 (1993). [DOI: http://dx.doi. org/10.1063/1.355315]   DOI
29 S. E. Curry, P. M. Lenahan, D. T. Krick, J. Kanicki, and C. T. Kirk, Appl. Phys. Lett., 56, 1359 (1990). [DOI: http://dx.doi.org/10.1063/1.102514]   DOI
30 H. Mackel and R. Ludemann, J. Appl. Phys., 92, 2602 (2002. [DOI: http://dx.doi.org/10.1063/1.1495529]   DOI
31 S. Dauwe, L. Mittelstadt, A. Metz, and R. Hezel, Prog. Photovoltaics, 10, 271 (2002). [DOI: http://dx.doi.org/10.1002/pip.420]   DOI
32 G. Dingemans, M. M. Mandoc, S. Bordihn, M.C.M. van de Sanden, and W. M. M. Kessels, Appl. Phys. Lett., 98, 222102 (2011). [DOI: http://dx.doi.org/10.1063/1.3595940]   DOI
33 S. Mack, A. Wolf, C. Brosinsky, S. Schmeisser, A. Kimmerle, P.Saint-Cast, M. Hofmann, and D. Biro, IEEE J. Photovoltaics, 1, 135 (2011). [DOI: http://dx.doi.org/10.1109/JPHOTOV. 2011.2173299]   DOI
34 J. Zhao, A. Wang, and M. A. Green, Sol. Energy Mater. Sol. Cells., 65, 429 (2001). [DOI: http://dx.doi.org/10.1016/S0927-0248(00)00123-9]   DOI
35 J. Zhao, A. Wang, and M. A. Green, Prog. Photovolt Res.Appl., 8, 549 (2000). [DOI: http://dx.doi.org/10.1002/1099-159X(200009/10)8:5<549::AID-PIP346>3.0.CO;2-Y]   DOI
36 Schultz O, Glunz SW, Willeke GP. Prog. Photovolt Res. Appl. 12, 553 (2004). [DOI: http://dx.doi.org/10.1002/pip.583]   DOI
37 M. Hofmann, S. Janz, C. Schmidt, S. Kambor, D. Suwito,N.Kohn, J. Rentsch, R. Preu, and S. W. Glunz, Sol. Energy Mater. Sol. Cells., 93, 1074 (2009). [DOI: http://dx.doi.org/10.1016/ j.solmat.2008.11.056]   DOI
38 H. P. Zhou, D. Y. Wei, S. Xu, S. Q. Xiao, L. X. Xu, S. Y. Huang,Y. N. Guo, S. Khan, and M. Xu, J. Phys. D Appl. Phys., 45, 395401 (2012). [DOI: http://dx.doi.org/10.1088/0022-3727/45/39/395401]   DOI
39 B. Hoex, F.J.J. Peeters, M. Creatore, M. A. Blauw, W. M. M.Kessels, and M. C. M. van de Sanden, J. Vac.Sci. Technol. A, 24, 1823 (2006). [DOI: http://dx.doi.org/10.1116/1.2232580]   DOI
40 V. D. Mihailetchi, Y. Komatsu, and L. J. Geerligs, Appl. Phys. Lett., 92, 063510 (2008). [DOI: http://dx.doi.org/10.1063/1.2870202]   DOI
41 C. Leguijt, P. Lolgen, J. A. Eikelboom, A. W. Weeber, F. M. Schuurmans, W. C. Sinke, P. F. A. Alkemade, P. M. Sarro, C. H. Maree, and L. A. Verhoef, Sol. Energy Mater. Sol. Cells., 40, 297 (1996). [DOI: http://dx.doi.org/10.1016/0927-0248(95)00155-7]   DOI
42 O. Schultz, A. Mette, M. Hermle, and S. W. Glunz, Prog. Photovoltaics, 16, 317 (2008). [DOI: http://dx.doi.org/10.1002/pip.814]   DOI
43 G. Agostinelli, A. Delabie, P. Vitanov, Z. Alexieva, H.F.W.Dekkers, S. D. Wolf, and G. Beaucarne, Sol. Energy Mater.Sol. Cells., 90, 3438 (2006). [DOI: http://dx.doi.org/10.1016/j.solmat.2006.04.014]   DOI
44 R. Hezel and K. Jaeger, J. Electrochem. Soc., 136, 518 (1989). [DOI: http://dx.doi.org/10.1149/1.2096673]   DOI
45 J. Schmidt, T. Lauinger, A. G. Aberle, and R. Hezel, Proc. of the 25th IEEE PVSC (Washington, DC, 1996) p. 413.
46 J. Benick, K. Zimmermann, J. Spiegelman, M. Hermle, and S. W. Glunz, Prog. Photovolt Res. Appl., 19, 361 (2011). [DOI: http://dx.doi.org/10.1002/pip.1020]   DOI
47 M. L. Reed and J. D. Plummer, J. Appl. Phys., 63, 5776 (1988). [DOI: http://dx.doi.org/10.1063/1.340317]   DOI
48 M. J. Kerr and A. Cuevas, Semicond. Sci. Technol., 17, 35 (2002). [DOI: http://dx.doi.org/10.1088/0268-1242/17/1/306]   DOI
49 S. Mack, A. Wolf, A. Walczak, B. Thaidigsmann, E. Allan Wotke, J. J. Spiegelman, R. Preu, and D. Biro, Sol. Energy Mater. Sol. Cells, 95, 2570 (2011). [DOI: http://dx.doi.org/10.1016/j.solmat.2011.03.002]   DOI
50 W. D. Eades and R. M. Swanson, J. Appl. Phys., 58, 4267 (1985). [DOI: http://dx.doi.org/10.1063/1.335562]   DOI
51 H. Sai, R. Imai, N. Yamamoto, T. Ishiwata, K. Arafune, Y.Ohshita, and M. Yamaguchi, Proc. of the 21st EUPVSEC
52 J. Zhao, A. Wang, P. Altermatt, and M. A. Green, Appl. Phys. Lett., 66, 3636 (1995). [DOI: http://dx.doi.org/10.1063/1.114124]   DOI
53 T. Lauinger, J. Schmidt, A.G. Aberle, R. Hezel, Appl. Phys. Lett., 68, 1232 (1996). [DOI: http://dx.doi.org/10.1063/1.115936]   DOI
54 H. Nagel, A. Aberle, and R. Hezel, Prog. Photovolt. Res. Appl., 17, 245 (1999). [DOI: http://dx.doi.org/10.1002/(SICI)1099-159X(199907/08)7:4<245::AID-IP255>3.0.CO;2-3]
55 J. Schmidt, J.D. Moschner, J. Henze, S. Dauwe, and R. Hezel, Proc. of the 19th EUPVSEC (Paris, France, 2004) p. 391.
56 B. Hoex, S. Heil, E. Langereis, M. Sanden, and W. Kessels, Appl. Phys. Lett., 89, 1 (2006). [DOI: http://dx.doi.org/10.1063/1.2240736]   DOI
57 C. Leguijt, P. Lolgen, J.A. Eikelboom, A.W. Weeber, F.M. Schuurmans, W.C. Sinke, P.F.A. Alkemade, P.M. Sarro, C.H.M. Maree, and L.A. Verhoef, Sol. Energy Mater. Sol. Cells., 40, 297 (1996).[DOI: http://dx.doi.org/10.1016/0927-0248(95)00155-7]   DOI
58 K. Kimur, Proc. of the 1st International Photovoltaic Science and Engineering Conference (Kobe, Japan, 1984) p. 37.
59 J. Mandelkorn and J.H. Lamneck, Proc. of the 9th IEEE PVSC, 66 (1972).
60 A. W. Blakers, A. Wang, A. M. Milne, J. Zhao, and M. A.Green, Appl. Phys. Lett., 55, 1363 (1989). [DOI: http://dx.doi.org/10.1063/1.101596]   DOI
61 J. Zhao, A. Wang, M. A. Green, Proc. of the 21st IEEE Photovoltaic Specialists Conference, 333 (1990). [DOI: http://dx.doi. org/10.1109/PVSC.1990.111642]   DOI
62 J. Zhao, A. Wang, and M. A. Green, Prog. Photovolt Res. Appl., 7, 471 (1999). [DOI: http://dx.doi.org/10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7]   DOI
63 A. Goetzberger, J. Knobloch, and B. Vob, Crystalline Silicon Solar Cells, (John Wiley and Sons, New York 1998), pp. 87.
64 www.itrpv.net
65 S. Rein, Lifetime Spectroscopy: A Method of Defect Characterization in Silicon for Photovoltaic Applications (Springer, Berlin 2004).
66 G. Declerck, R. Van Overstraeten, and G. Broux, Solid-State Electron, 16, 1451 (1973). [DOI: http://dx.doi.org/10.1016/0038-1101(73)90062-2]   DOI
67 S.W. Glunz, Advances in Optoelectronics, 2007, 15 (2007). [DOI: http://dx.doi.org/10.1155/2007/97370]   DOI
68 A. Aberle, Crystalline Silicon Solar Cells: Advanced Surface Passivation and Analysis (Centre for Photovoltaic Engineering, University of NSW, Australia 1999).
69 M. H. White and J. R. Cricchi, IEEE T. Electron Dev., 19, 1280 (1972). [DOI: http://dx.doi.org/10.1109/T-ED.1972.17591]   DOI
70 A. Aberle, Prog. Photovolt. Res. Appl., 8, 473 (2000). [DOI: http://dx.doi.org/10.1002/1099-159X(20000910)8:5<473::AID-PIP337>3.0.CO;2-D]   DOI