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http://dx.doi.org/10.4313/TEEM.2015.16.1.46

Temperature Dependence of SiInZnO Thin Film Transistor Fabricated by Solution Process  

Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
Kang, Taehyun (Department of Semiconductor Engineering, Cheongju University)
Han, Sang Min (Department of Semiconductor Engineering, Cheongju University)
Lee, Young Seon (Department of Semiconductor Engineering, Cheongju University)
Choi, Jun Young (Department of Electrical Engineering and Institute for Nano Science, Korea University)
Publication Information
Transactions on Electrical and Electronic Materials / v.16, no.1, 2015 , pp. 46-48 More about this Journal
Abstract
Thin film transistor (TFT) with silicon indium zinc oxide (SIZO) was fabricated by solution process, and the effect of annealling temperature on the electrical performance has been explored. The performance of SIZO TFT exhibited saturation mobility of $1.37cm^2$/Vs, a threshold voltage of -7.2 V, and an on-off ratio of $1.1{\times}10^5$.
Keywords
Oxide thin film transistors; SiInZnO; Solution process;
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