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http://dx.doi.org/10.4313/TEEM.2004.5.1.015

Investigation of the Alignment Phenomena on the a-C:H Thin Films by PECVD System using Ion-beam Alignment Method  

Park, Chang-Joon (Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University)
Hwang, Jeoung-Yeon (Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University)
Seo, Dae-Shik (Department of Electrical and Electronic Engineering, College of Engineering, Yonsei University)
Ahn, Han-Jin (Department of Metallurgical Engineering, College of Eng., Yonsei University)
Kim, Kyung-Chan (Department of Metallurgical Engineering, College of Eng., Yonsei University)
Baik, Hong-Koo (Department of Metallurgical Engineering, College of Eng., Yonsei University)
Publication Information
Transactions on Electrical and Electronic Materials / v.5, no.1, 2004 , pp. 15-18 More about this Journal
Abstract
We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film by plasma enhanced chemical vapor deposition (PECVD) system for 30 sec under 30W rf power at a gas pressure of 1.4＊10$\^$-1/ torr. A high pretilt angle of about 5 by ion beam exposure on the a-C:H thin film surface was measured. A good LC alignment by the ion beam alignment method on the a-C:H thin film surface was observed at annealing temperature of 250$^{\circ}C$, and the alignment defect of NLC was observed above annealing temperature of 300$^{\circ}C$. Consequently, the high LC pretilt angle and the good thermal stability of LC alignment by the ion beam alignment method on the a-C:H thin film by PECVD method as working gas at 30W rf bias condition can be achieved.
Keywords
a-C:H thin film; Ion beam exposure; Nematic liquid crystal; Annealing effect; PECVD method;
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Times Cited By KSCI : 1  (Citation Analysis)
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