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http://dx.doi.org/10.5573/JSTS.2016.16.3.346

Atomic Layer Deposition of TiO2 using Titanium Isopropoxide and H2O: Operational Principle of Equipment and Parameter Setting  

Cho, Karam (School of Electrical and Computer Engineering, University of Seoul)
Park, Jung-Dong (Division of Electronics and Electrical Engineering, Dongguk University)
Shin, Changhwan (School of Electrical and Computer Engineering, University of Seoul)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.16, no.3, 2016 , pp. 346-351 More about this Journal
Abstract
Titanium dioxide ($TiO_2$) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and $H_2O$ as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the $TiO_2$ film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.
Keywords
Atomic layer deposition; $TiO_2$; titanium isopropoxide; $H_2O$;
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