1 |
Kemell, M., Pore, V., Tupala, J., Ritala, M., Leskela, M., "Atomic layer deposition of nanostructured photocatalysts via template approach", Chemistry of Materials, Vol.19, No.7, pp.1816-20, 2007.
DOI
|
2 |
Euvananont, C., Junin, C., Inpor, K., Limthongkul, P., Thanachayanont, C., " optical coating layers for self-cleaning applications", Ceramics International, Vol.34, No.4, pp.1067-71, 2008.
DOI
|
3 |
Wang, C.-W., Chen, S.-F., Chen, G.-T., "Gamma-ray-irradiation effects on the leakage current and reliability of sputtered gate oxide in metal-oxide-semiconductor capacitors", J. Appl. Phys., Vol.91, pp.9198-203, 2002.
DOI
|
4 |
Frohlich, K., Tapajna, M., Rosova, A., Dobrocka, E., Husekova, K., Aarik, J., et al., "Growth of highdielectric- constant films in capacitors with electrodes", Electrochemical and Solid-State Letters, Vol.11, No.6, pp.G19-G21, 2008.
DOI
|
5 |
Wu, T., Wu, C., Chen, M., "Highly insulative barium zirconate-titanate thin films prepared by rf magnetron sputtering for dynamic random access memory applications", Appl. Phys. Lett., Vol.69, No.18, pp.2659-61, 1996.
DOI
|
6 |
Kim, K., Lee, S., "Integration of lead zirconium titanate thin films for high density ferroelectric random access memory", J. Appl. Phys., Vol.100, No.5, pp.051604, 2006.
DOI
|
7 |
Aarik, L., Arroval, T., Rammula, R., Mandar, H., Sammelselg, V., Aarik, J., "Atomic layer deposition of TiO 2 from TiCl 4 and O 3", Thin Solid Films, Vol.542, pp.100-7, 2013.
DOI
|
8 |
Elam, J., Schuisky, M., Ferguson, J., George, S., "Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH 3", Thin Solid Films, Vol.436, No.2, pp.145-56, 2003.
DOI
|
9 |
Ritala, M., Leskela, M., Niinisto, L., Haussalo, P., "Titanium isopropoxide as a precursor in atomic layer epitaxy of titanium dioxide thin films", Chemistry of materials, Vol.5, No.8, pp.1174-81, 1993.
DOI
|
10 |
Xie, Q., Jiang, Y.-L., Detavernier, C., Deduytsche, D., Van Meirhaeghe, R. L., Ru, G.-P., et al., "Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and ", J. Appl. Phys., Vol.102, No.8, pp.083521, 2007.
DOI
|