Browse > Article
http://dx.doi.org/10.5573/JSTS.2014.14.5.503

On-State Resistance Instability of Programmed Antifuse Cells during Read Operation  

Han, Jae Hwan (Department of Electronic Engineering, Sogang University)
Lee, Hyunjin (Department of Electronic Engineering, Sogang University)
Kim, Wansoo (Department of Electronic Engineering, Sogang University)
Yoon, Gyuhan (Department of Electronic Engineering, Sogang University)
Choi, Woo Young (Department of Electronic Engineering, Sogang University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.14, no.5, 2014 , pp. 503-507 More about this Journal
Abstract
The on-state resistance ($R_{ON}$) instability of standard complementary metal-oxide-semiconductor (CMOS) antifuse cells has been observed for the first time by using acceleration factors: stress current and ambient temperature. If the program current is limited, the $R_{ON}$ increases as time passes during read operation.
Keywords
Antifuse; reliability; on-state resistance instability;
Citations & Related Records
연도 인용수 순위
  • Reference
1 P. Candelier, N. Villani, J.-P. Schoellkopf, and P. Mortini, "One time programmable drift antifuse cell reliability," Proc. IEEE Int. Reliabil. Phys. Symp., pp. 169-173, Apr., 2000.
2 J. Kim and K. Lee, "Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse," IEEE Electron Device lett., vol. 24, no. 9, pp. 589-591, Sept. 2003   DOI   ScienceOn
3 H. Ito and T. Namekawa, "Pure CMOS one-time programmable memory using gate-ox anti-fuse," Proc. IEEE Custom Integr. Circuits Conf., pp.469-471, Oct. 2004.
4 H.-K. Cha, I. Yun, J. Kim, B.-C So, K. Chun, I. Nam, and K. Lee, "A 32-KB Standard CMOS antifuse one-time programmable ROM embedded in a 16-bit microcontroller," IEEE Journal of Solid-State Circuits, vol. 41, no. 9, pp. 2115-2124, Sep., 2006.   DOI   ScienceOn
5 R. J. Wong, K. E. Gordon, and A. K. Chan, "Time dependent reliability of the programmed metal electrode antifuse," Proc. IEEE Int. Reliabil. Phys. Symp., pp. 22-26, May 1996..
6 N. Vasudevan, R. B. Fair, H. Z. Massoud, T. Zhao, K. Look, Y. Karpovich, and M. J. Hart, "ON-state reliability of amorphous-silicon antifuses," Journal of Appl. Phys., vol. 84, no. 11, pp. 6440-6447, Dec., 1998.   DOI
7 J. Sune, E. Miranda, M. Nafria, and X. Aymerich, "Point contact conduction at the oxid breakdown of MOS devices," in IEEE International Electron Devices Meeting, pp. 191-194, Dec., 1998.
8 E. Miranda, J. Sune, R. Rodriguez, M. Nafria, and X. Aymerich, "Conduction properties of breakdown paths in ultrathin gate oxides," Microelectron Reliab. vol. 40, pp. 687-690, Apr. 2000.   DOI   ScienceOn
9 E. Miranda, J. Sune, R. Rodriguez, M. Nafria, and X. Aymerich, "Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides," Solid-State Electron., vol. 45, pp. 1327-1332, Aug., 2001.   DOI
10 J. R. Black, "Electromigration-a brief survey and some recent results," IEEE Transaction on Electron Devices, vol. ED-16, no. 4, pp. 338-347, 1969.