On-State Resistance Instability of Programmed Antifuse Cells during Read Operation |
Han, Jae Hwan
(Department of Electronic Engineering, Sogang University)
Lee, Hyunjin (Department of Electronic Engineering, Sogang University) Kim, Wansoo (Department of Electronic Engineering, Sogang University) Yoon, Gyuhan (Department of Electronic Engineering, Sogang University) Choi, Woo Young (Department of Electronic Engineering, Sogang University) |
1 | P. Candelier, N. Villani, J.-P. Schoellkopf, and P. Mortini, "One time programmable drift antifuse cell reliability," Proc. IEEE Int. Reliabil. Phys. Symp., pp. 169-173, Apr., 2000. |
2 | J. Kim and K. Lee, "Three-transistor one-time programmable (OTP) ROM cell array using standard CMOS gate oxide antifuse," IEEE Electron Device lett., vol. 24, no. 9, pp. 589-591, Sept. 2003 DOI ScienceOn |
3 | H. Ito and T. Namekawa, "Pure CMOS one-time programmable memory using gate-ox anti-fuse," Proc. IEEE Custom Integr. Circuits Conf., pp.469-471, Oct. 2004. |
4 | H.-K. Cha, I. Yun, J. Kim, B.-C So, K. Chun, I. Nam, and K. Lee, "A 32-KB Standard CMOS antifuse one-time programmable ROM embedded in a 16-bit microcontroller," IEEE Journal of Solid-State Circuits, vol. 41, no. 9, pp. 2115-2124, Sep., 2006. DOI ScienceOn |
5 | R. J. Wong, K. E. Gordon, and A. K. Chan, "Time dependent reliability of the programmed metal electrode antifuse," Proc. IEEE Int. Reliabil. Phys. Symp., pp. 22-26, May 1996.. |
6 | N. Vasudevan, R. B. Fair, H. Z. Massoud, T. Zhao, K. Look, Y. Karpovich, and M. J. Hart, "ON-state reliability of amorphous-silicon antifuses," Journal of Appl. Phys., vol. 84, no. 11, pp. 6440-6447, Dec., 1998. DOI |
7 | J. Sune, E. Miranda, M. Nafria, and X. Aymerich, "Point contact conduction at the oxid breakdown of MOS devices," in IEEE International Electron Devices Meeting, pp. 191-194, Dec., 1998. |
8 | E. Miranda, J. Sune, R. Rodriguez, M. Nafria, and X. Aymerich, "Conduction properties of breakdown paths in ultrathin gate oxides," Microelectron Reliab. vol. 40, pp. 687-690, Apr. 2000. DOI ScienceOn |
9 | E. Miranda, J. Sune, R. Rodriguez, M. Nafria, and X. Aymerich, "Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides," Solid-State Electron., vol. 45, pp. 1327-1332, Aug., 2001. DOI |
10 | J. R. Black, "Electromigration-a brief survey and some recent results," IEEE Transaction on Electron Devices, vol. ED-16, no. 4, pp. 338-347, 1969. |