A Sense Amplifier Scheme with Offset Cancellation for Giga-bit DRAM |
Kang, Hee-Bok
(R&D Div., Hynix Semiconductor)
Hong, Suk-Kyoung (R&D Div., Hynix Semiconductor) Chang, Heon-Yong (R&D Div., Hynix Semiconductor) Park, Hae-Chan (R&D Div., Hynix Semiconductor) Park, Nam-Kyun (R&D Div., Hynix Semiconductor) Sung, Man-Young (Department of Electrical Engineering, Korea Univ.) Ahn, Jin-Hong (R&D Div., Hynix Semiconductor) Hong, Sung-Joo (R&D Div., Hynix Semiconductor) |
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3 | Jae-Yoon Sim, et al., 'Charge-Transferred Presensing, Negatively Precharged Word-Line, and Temperature-Insensitive Power-Up Schemes for Low-Voltage DRAMs,' IEEE J. Solid-State Circuits, vol. 39, pp. 694-703, April. 2004 DOI ScienceOn |
4 | Masaki Tsukude, et al., 'A 1.2-to 3.3-V Wide Voltage-Range/Low-Power DRAM with a Charge-Transfer Presensing Scheme,' IEEE J. Solid-State Circuits, vol. 32, pp. 1721-1727, Nov. 1997 DOI ScienceOn |
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