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Accurate Compact MOSFET Modeling Scheme for Harmonic Distortion Analysis  

Iniguez, B. (DEEEA Universitat)
Picos, R. (Department of Physics, Universitat de les Illes Balears)
Kwon, I. (Department of Electrical Engineering and Computer Science, KAIST)
Shur, M.S. (ECSE Department Rensselaer Polytechinc Institute)
Fjeldly, T.A. (UniK-University Graduate Center)
Lee, K. (Department of Electrical Engineering and Computer Science, KAIST)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.4, no.3, 2004 , pp. 141-148 More about this Journal
Abstract
We discuss and develop a compact MOSFET modeling scheme in order to obtain accurate descriptions of the drain current and its derivatives up to the 5th order. We have analyzed the physical effects which govern the behaviour of the 3rd derivative in long and deep-subrnicron channel MOSFETs. Our modeling agrees well with experimental data and describes continuous transitions between operating regimes, thanks to the use of continuous functions, which do not introduce any artificial peaks.
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1 Shin, Hyungcheol ; Minkyu Je ; Jeonghu Han; Kwyro Lee, Microelectronics Reliability, vol. 43 no. pp.601-609, Apr. 2003   DOI   ScienceOn
2 K. Lee , 'The Impact of nm CMOS Technology of Wireless Circuit and System,' Proc of the 2003 Asia-pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
3 J A Power and W A Lane, IEEE Trans on Computer-Arded Design, vol 11, pp 1418-1425, November 1992   DOI   ScienceOn
4 N D Arora, et al , IEEE Trans on Electron Devices, vol 41, pp 988-997, June 1994   DOI   ScienceOn
5 Y Cheng, et al , IEEE Trans on Electron Devices, vol 44, pp 277-287, February 1997   DOI   ScienceOn
6 S B Chiah, et al ,IEEE Electron Device Letters, vol 25, no 5, May 2004   DOI   ScienceOn
7 C C McAndrew, B K Bhattacharyya and O Wing, IEEE Electron Device Letters, vol 12, pp 565-567, October 1991   DOI   ScienceOn
8 B Iniguez and E Garcia-Moreno , Analog Integrated Circuits and Signal Processing (Kluwer), vol 13, no 3, pp 241-259, July 1997   DOI   ScienceOn
9 B Iniguez and E Garcia-Moreno, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. vol 14, no 2, pp 163-166, February 1995   DOI   ScienceOn
10 T A Fjeldly, T Ytterdal and M Shur, Introduction to Device Modeling and CIrcuit Simulation, New York, John Wiley & Sons, 1998
11 K Lee, M Shur, T A Fjeldly and T Ytterdal, Semiconductor Device Modeling for VLSI, Prentice-Hall, 1993
12 K. Joardar, et al., IEEE Trans. on Electron Devices, vol. 45, pp. 134-148, January 1998   DOI   ScienceOn
13 M S Shur, T A Fjeldly, T Ytterdal and K Lee, 'Unified MOSFET model, 'Solid-State Electronics, vol 35, no 12, pp 1795-1802, December 1992   DOI   ScienceOn
14 C -K Park, et al , 'A unified current-voltage model for long-channel nMOSFETs,' IEEE Trans on Electron Devices, vol 38, pp 399-406, February 1991   DOI   ScienceOn
15 A I A Cunha, M C Schneider, C Galup-Montoro, 'An MOS Transistor Model for Analog Circuit Design', IEEE Journ Solid-State Clrcuits,Vol 33, No 10, pp 1510-1519, October 1998   DOI   ScienceOn
16 J. -M. Sallese, et al., Solid-State Electronics, vol. 47, pp 677-683, 2003   DOI   ScienceOn
17 T. -L. Chen and G. Gildenblat, Solid-State Electronics, vol. 45, pp. 335-339, 2001   DOI   ScienceOn
18 Y. P. Tsividis, Operation and Modeling of the MOS Transistor, 2nd ed., New York: McGraw Hill, 1999
19 R. van Langevelde, et al., Electron Devices Meeting, 2000, IEDM Technical Digest. International , Pages:807 - 810, 10-13 Dec. 2000   DOI
20 R. van Langevelde and F. M. Klaassen, Solid-State Electronic, vol. 44, no., pp. 409-418, March 2000   DOI   ScienceOn
21 R. Van Langevelde and F. M. Klaasen, IEEE Trans. on Electron Devices, vol. 44, no, 11 pp. 2044-2052, November 1997   DOI   ScienceOn