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Accurate Extraction of Crosstalk Induced Dynamic Variation of Coupling Capacitance for Interconnect Lines of CMOSFETs  

Kim, Yong-Goo (Dept. of Electronics Engineering, Chungnam National University)
Ji, Hee-Hwan (Dept. of Electronics Engineering, Chungnam National University)
Yoon, Hyung-Sun (Dept. of Electronics Engineering, Chungnam National University)
Park, Sung-Hyung (System IC Technology & Product Development Center, Hynix Semiconductor)
Lee, Heui-Seung (System IC Technology & Product Development Center, Hynix Semiconductor)
Kang, Young-Seok (System IC Technology & Product Development Center, Hynix Semiconductor)
Kim, Dae-Byung (System IC Technology & Product Development Center, Hynix Semiconductor)
Kim, Dae-Mann (Computational Sciences, Korea Institute for Advanced Study)
Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
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Abstract
We, for the first time, present novel test patterns and conclusive on-chip data indicating that the variation of coupling capacitance, ${\Delta}C_C$ by crosstalk can be larger than static coupling capacitance, $C_C$. The test chip is fabricated using a generic 150 nm CMOS technology with 7 level metallization. It is also shown that ${\Delta}C_C$ is strongly dependent on the phase of aggressive lines. For antiphase crosstalk ${\Delta}C_C$ is always larger than $C_C$ while for in-phase crosstalk $D_{\Delta}C_C$is smaller than $C_C$.
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