1 |
E. Roman, R. Alonso, P. Ibanez, S. Elorduizapatarietxe, and D. Goitia, “Intelligent PV module for grid-connected PV systems,” IEEE Trans. Ind. Electron., Vol. 53, No. 4, pp. 1066-1073, Jun. 2006.
DOI
|
2 |
B. Gu, J. Dominic, J.-S. Lai, C.-L. Chen, T. LaBella, and B. Chen, “High reliability and efficiency single-phase transformerless inverter for grid-connected photovoltaic systems,” IEEE Trans. Power Electron., Vol. 28, No. 5, pp. 2235-2245, May 2013.
DOI
|
3 |
H. Abu-Rub, J. Holtz, J. Rodriguez, and G. Baoming, “Medium-voltage multilevel converters - State of the art, challenges, and requirements in industrial applications,” IEEE Trans. Ind. Electron., Vol. 57, No. 8, pp. 2581-2596, Aug. 2010.
DOI
|
4 |
S. Yang, A. Bryant, P. Mawby, D. Xiang, L. Ran, and P. Tavner, “An industry-based survey of reliability in power electronic converters,” IEEE Trans. Ind. Appl., Vol. 47, No. 2, pp. 1441-1451, May/Jun. 2011.
DOI
|
5 |
S. Yang, D. Xiang, A. Bryant, P. Mawby, L. Ran, and P. Tavner, "Condition monitoring for device reliability in power electronic converters: a review," IEEE Trans. Power Electron., Vol.25, No.11, pp. 2734-2752, Nov. 2010.
DOI
|
6 |
L. R. GopiReddy, L. M. Tolbert, and B. Ozpineci, "Power cycle testing of power switches: a literature survey," IEEE Trans. Power Electron., Vol. 30, No.5, pp. 2465-2473, May 2015.
DOI
|
7 |
N. Patil, J. Celaya, D. Das, K. Goebel, and M. Pecht, “Precursor parameter identification for insulated gate bipolar transistor (IGBT) prognostics,” IEEE Trans. Rel., Vol. 58, No. 2, pp. 271-276, Jun. 2009.
DOI
|
8 |
W. Kexin, D. Mingxing, X. Linlin, and L. Jian, “Study of bonding wire failure effects on external measureable signals of IGBT module,” IEEE Trans. Device Mater. Rel., Vol. 14, No. 1, pp. 83-89, Mar. 2014.
DOI
|
9 |
R. Gelagaev, P. Jacqmaer, and J. Everts, “A fast voltage clamp circuit for the accurate measurement of the dynamic on-resistance of power transistors,” IEEE Trans. Ind. Electron., Vol. 62, No. 2, pp. 1241-1250, Feb. 2015.
DOI
|
10 |
M. S. Nasrin, F. H. Khan, and M. K. Alam, “Quantifying device degradation in live power converters using SSTDR assisted impedance matrix,” IEEE Trans. Power Electron., Vol. 29, No. 6, pp. 3116-3131, Jun. 2014.
DOI
|
11 |
U.-M. Choi, F. Blaabjerg, S. Jorgensen, S. Munk-Nielsen, and B. Rannestad, “Reliability improvement of power converters by means of condition monitoring of IGBT modules,” IEEE Trans. Power Electron., Vol. 32, No. 10, pp. 7990-7997, Oct. 2017.
DOI
|
12 |
Z. Wang, B. Tian, W. Qiao, and L. Qu, “Real-time aging monitoring for IGBT modules using case temperature,” IEEE Trans. Ind. Electron., Vol. 63, No. 2, pp. 1168-1178, Feb. 2016.
DOI
|
13 |
H. Chen, B. Ji, V. Pickert, and W. Cao, “Real-time temperature estimation for power MOSFETs considering thermal aging effects,” IEEE Trans. Device Mater. Rel., Vol. 14, No. 1, pp. 220-228, Mar. 2014.
DOI
|
14 |
Y. Avenas, L. Dupont, and Z. Khatir, “Temperature measurement of power semiconductor devices by thermossensitive electrical parameters - A review,” IEEE Trans. Power Electron., Vol. 27, No. 6, pp. 3081-3092, Jun. 2012.
DOI
|
15 |
D.W. Brown, M. Abbas, A. Ginart, I. N. Ali, P. W. Kalgren, and G. J. Vachtsevanos, “Turn-off time as an early indicator of insulated gate bipolar transistor latch-up,” IEEE Trans. Power Electron., Vol. 27, No. 2, pp. 479-489, Feb. 2012.
DOI
|
16 |
L. Dupont, Y. Avenas, and P.-O. Jeannin, "Comparison of junction temperature evaluations in a power IGBT module using an IR camera and three thermosensitive electrical parameters," IEEE Trans. Ind. Appl. Vol. 49, No. 4, pp. 237-243, Jul./Aug. 2013.
|
17 |
S. Zhou, L. Zhou, and P. Sun, “Monitoring potential defects in an IGBT module based on dynamic changes of the gate current,” IEEE Trans. Power Electron., Vol. 28, No. 3, pp. 1479-1487, Mar. 2013.
DOI
|
18 |
M. A. Rodriguez-Blanco, A. Claudio-Sanchez, D. Theilliol, L. G. Vela-Valdes, P. Sibaja-Teran, L. Hernandez-Gonzalez, and J. Aguayo-Alquicira, “A failure-detection strategy for IGBT based on gate-voltage behavior applied to a motor drive system,” IEEE Trans. Ind. Electron., Vol. 58, No. 5, pp. 1625-1633, May 2011.
DOI
|
19 |
A. E. Ginart, D. W. Brown, P. W. Kalgren, and M. J. Roemer, "Online ringing characterization as a diagnostic technique for IGBTs in power drives," IEEE Trans. Instrum. Meas., Vol. 58, No.7, pp. 2290-2299, Jul. 2009.
DOI
|
20 |
J. H. Hayes and T. H. Hubing, "Monitoring transistor degradation in power inverters through pole shifts," IEEE Trans. Electromagn. Compat. Vol. 57, No. 4, pp. 764-770, Aug. 2015.
DOI
|
21 |
L. Ren, Q. Shen, and C. Gong, "Ringing frequency extraction for health monitoring of power transistors," in Proc. IEEE 42nd Annu. Conf. Ind. Electron, pp. 447-452, Nov. 2016.
|
22 |
A.-O. Boudraa, and J.-C. Cexus, “EMD-based signal filtering,” IEEE Trans. Instrum. Meas., Vol. 56, No. 6, pp. 2196-2202, Dec. 2007.
DOI
|
23 |
A. Soualhi, K. Medjaher, and N. Zerhouni, “Bearing health monitoring based on Hilbert-Huang transform, support vector machine, and regression,” IEEE Trans. Instrum. Meas., Vol. 64, No. 1, pp. 52-62, Jan. 2015.
DOI
|
24 |
R. Yan and R. X. Gao, “Hilbert-Huang transform-based vibration signal analysis for machine health monitoring,” IEEE Trans. Instrum. Meas., Vol. 55, No. 6, pp. 2320-2329, Dec. 2006.
DOI
|